Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 7

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SSM6J207FE,LF MOSFET P-CH 30V 1.4A ES6 Toshiba Semiconductor and Storage	3,375	-	询价单	数据表	U-MOSII	SOT-563, SOT-666	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	1.4A (Ta)	4V, 10V	251mOhm @ 650mA, 10V	Surface Mount	2.6V @ 1mA	-	30 V	±20V	137 pF @ 15 V	-	-	ES6	-	500mW (Ta)	150°C (TJ)
SSM6J401TU,LF MOSFET P-CH 30V 2.5A UF6 Toshiba Semiconductor and Storage	2,620	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	2.5A (Ta)	4V, 10V	73mOhm @ 2A, 10V	Surface Mount	2.6V @ 1mA	16 nC @ 10 V	30 V	±20V	730 pF @ 15 V	-	-	UF6	-	500mW (Ta)	150°C
SSM6K824R,LF N-CH MOSFET 20V, +/-8V, 6A ,0.03 Toshiba Semiconductor and Storage	5,940	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	1.5V, 4.5V	33mOhm @ 4A, 4.5V	Surface Mount	1V @ 1mA	3.6 nC @ 4.5 V	20 V	±8V	410 pF @ 10 V	-	-	6-TSOP-F	-	1.5W (Ta)	150°C
SSM6K208FE,LF MOSFET N-CH 30V 1.9A ES6 Toshiba Semiconductor and Storage	3,980	-	询价单	数据表	-	SOT-563, SOT-666	Tape & Reel (TR)	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	1.9A (Ta)	1.8V, 4V	133mOhm @ 1A, 4V	Surface Mount	1V @ 1mA	1.9 nC @ 4 V	30 V	±12V	123 pF @ 15 V	-	-	ES6	-	500mW (Ta)	150°C
SSM6K204FE,LF MOSFET N-CH 20V 2A ES6 Toshiba Semiconductor and Storage	4,000	-	询价单	数据表	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	2A (Ta)	1.5V, 4V	126mOhm @ 1A, 4V	Surface Mount	1V @ 1mA	3.4 nC @ 10 V	20 V	±10V	195 pF @ 10 V	-	-	ES6	-	500mW (Ta)	150°C
SSM3H137TU,LF MOSFET N-CH 34V 2A UFM Toshiba Semiconductor and Storage	2,500	-	询价单	数据表	U-MOSIV	3-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	2A (Ta)	4V, 10V	240mOhm @ 1A, 10V	Surface Mount	1.7V @ 1mA	3 nC @ 10 V	34 V	±20V	119 pF @ 10 V	-	-	UFM	-	800mW (Ta)	150°C
SSM6J422TU,LXHF SMOS P-CH VDSS=-20V, VGSS=+6/-8V Toshiba Semiconductor and Storage	2,771	-	询价单	数据表	U-MOSVI	6-SMD, Flat Leads	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4A (Ta)	1.5V, 4.5V	42.7mOhm @ 3A, 4.5V	Surface Mount	1V @ 1mA	12.8 nC @ 4.5 V	20 V	+6V, -8V	840 pF @ 10 V	AEC-Q101	-	UF6	Automotive	1W (Ta)	150°C
SSM6K810R,LF SMALL SIGNAL MOSFET N-CH VDSS=10 Toshiba Semiconductor and Storage	5,744	-	询价单	数据表	U-MOSVIII-H	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3.5A (Ta)	4.5V, 10V	69mOhm @ 2A, 10V	Surface Mount	2.5V @ 100µA	3.2 nC @ 4.5 V	100 V	±20V	430 pF @ 15 V	-	-	6-TSOP-F	-	1.5W (Ta)	175°C
SSM6K809R,LF SMALL SIGNAL MOSFET N-CH VDSS=60 Toshiba Semiconductor and Storage	3,272	-	询价单	数据表	U-MOSVIII-H	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	4V, 10V	36mOhm @ 5A, 10V	Surface Mount	2.5V @ 100µA	9.3 nC @ 10 V	60 V	±20V	550 pF @ 10 V	-	-	6-TSOP-F	-	1.5W (Ta)	175°C
TPC8129,LQ(S MOSFET P-CH 30V 9A 8SOP Toshiba Semiconductor and Storage	4,634	-	询价单	数据表	U-MOSVI	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	9A (Ta)	4.5V, 10V	22mOhm @ 4.5A, 10V	Surface Mount	2V @ 200µA	39 nC @ 10 V	30 V	+20V, -25V	1650 pF @ 10 V	-	-	8-SOP	-	1W (Ta)	150°C (TJ)

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