Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 10

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPCP8011,LF PB-F POWER MOSFET TRANSISTOR PS- Toshiba Semiconductor and Storage	2,723	-	询价单	数据表	-	8-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	6V, 10V	51.2mOhm @ 2.5A, 10V	Surface Mount	3V @ 1mA	11.8 nC @ 10 V	40 V	±20V	505 pF @ 10 V	AEC-Q101	-	PS-8	Automotive	940mW (Ta)	175°C
TK3P50D,RQ(S MOSFET N-CH 500V 3A DPAK Toshiba Semiconductor and Storage	1,399	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3A (Ta)	10V	3Ohm @ 1.5A, 10V	Surface Mount	4.4V @ 1mA	7 nC @ 10 V	500 V	±30V	280 pF @ 25 V	-	-	DPAK	-	60W (Tc)	150°C (TJ)
TK2P90E,RQ PB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage	5,943	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	2A (Ta)	10V	5.9Ohm @ 1A, 10V	Surface Mount	4V @ 200µA	12 nC @ 10 V	900 V	±30V	500 pF @ 25 V	-	-	DPAK	-	80W (Tc)	150°C
TPH2R805PL,LQ PB-F POWER MOSFET TRANSISTOR SOP Toshiba Semiconductor and Storage	2,980	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	2.8mOhm @ 50A, 10V	Surface Mount	2.4V @ 500µA	73 nC @ 10 V	45 V	±20V	5175 pF @ 22.5 V	-	-	8-SOP Advance (5x5)	-	830mW (Ta), 116W (Tc)	175°C
TPCP8103-H(TE85LFM MOSFET P-CH 40V 4.8A PS-8 Toshiba Semiconductor and Storage	8,833	-	询价单	数据表	U-MOSIII-H	8-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4.8A (Ta)	4.5V, 10V	40mOhm @ 2.4A, 10V	Surface Mount	2V @ 1mA	19 nC @ 10 V	40 V	±20V	800 pF @ 10 V	-	-	PS-8 (2.9x2.4)	-	840mW (Ta)	150°C (TJ)
SSM6K411TU(TE85L,F MOSFET N-CH 20V 10A UF6 Toshiba Semiconductor and Storage	5,684	-	询价单	数据表	U-MOSIV	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	2.5V, 4.5V	12mOhm @ 7A, 4.5V	Surface Mount	1.2V @ 1mA	9.4 nC @ 4.5 V	20 V	±12V	710 pF @ 10 V	-	-	UF6	-	1W (Ta)	150°C (TJ)
TK5P50D(T6RSS-Q) MOSFET N-CH 500V 5A DPAK Toshiba Semiconductor and Storage	3,871	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	1.5Ohm @ 2.5A, 10V	Surface Mount	4.4V @ 1mA	11 nC @ 10 V	500 V	±30V	490 pF @ 25 V	-	-	DPAK	-	80W (Tc)	150°C (TJ)
TK5P60W5,RVQ PB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage	2,000	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Ta)	10V	990mOhm @ 2.3A, 10V	Surface Mount	4.5V @ 230µA	11.5 nC @ 10 V	600 V	±30V	370 pF @ 300 V	-	-	DPAK	-	60W (Tc)	150°C
TJ10S04M3L(T6L1,NQ MOSFET P-CH 40V 10A DPAK Toshiba Semiconductor and Storage	1,895	-	询价单	数据表	U-MOSVI	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	10A (Ta)	6V, 10V	44mOhm @ 5A, 10V	Surface Mount	3V @ 1mA	19 nC @ 10 V	40 V	+10V, -20V	930 pF @ 10 V	-	-	DPAK+	-	27W (Tc)	175°C (TJ)
TK5P53D(T6RSS-Q) MOSFET N-CH 525V 5A DPAK Toshiba Semiconductor and Storage	1,710	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	10V	1.5Ohm @ 2.5A, 10V	Surface Mount	4.4V @ 1mA	11 nC @ 10 V	525 V	±30V	540 pF @ 25 V	-	-	DPAK	-	80W (Tc)	150°C (TJ)

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