Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 4

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK20V60W5,LVQ MOSFET N-CH 600V 20A 4DFN Toshiba Semiconductor and Storage	4,812	-	询价单	数据表	DTMOSIV	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	190mOhm @ 10A, 10V	Surface Mount	4.5V @ 1mA	55 nC @ 10 V	600 V	±30V	1800 pF @ 300 V	-	-	4-DFN-EP (8x8)	-	156W (Tc)	150°C (TJ)
SSM3J304T(TE85L,F) MOSFET P-CH 20V 2.3A TSM Toshiba Semiconductor and Storage	8,387	-	询价单	数据表	U-MOSIII	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	2.3A (Ta)	1.8V, 4V	127mOhm @ 1A, 4V	Surface Mount	-	6.1 nC @ 4 V	20 V	±8V	335 pF @ 10 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
TK170V65Z,LQ MOSFET N-CH 650V 18A 5DFN Toshiba Semiconductor and Storage	4,950	-	询价单	数据表	DTMOSVI	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	18A (Ta)	10V	170mOhm @ 9A, 10V	Surface Mount	4V @ 730µA	29 nC @ 10 V	650 V	±30V	1635 pF @ 300 V	-	-	4-DFN-EP (8x8)	-	150W (Tc)	150°C
TK160F10N1,LXGQ MOSFET N-CH 100V 160A TO220SM Toshiba Semiconductor and Storage	4,477	-	询价单	数据表	U-MOSVIII-H	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	160A (Ta)	10V	2.4mOhm @ 80A, 10V	Surface Mount	4V @ 1mA	121 nC @ 10 V	100 V	±20V	8510 pF @ 10 V	-	-	TO-220SM(W)	-	375W (Tc)	175°C
TK22A65X,S5X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	183	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	22A (Ta)	10V	150mOhm @ 11A, 10V	Through Hole	3.5V @ 1.1mA	50 nC @ 10 V	650 V	±30V	2400 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C
SSM3J35FS,LF SMALL LOW RON PCH MOSFETS VDSS:- Toshiba Semiconductor and Storage	3,833	-	询价单	数据表	-	SC-75, SOT-416	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100mA (Ta)	1.2V, 4V	8Ohm @ 50mA, 4V	Surface Mount	1V @ 1mA	-	20 V	±10V	12.2 pF @ 3 V	-	-	SSM	-	100mW (Ta)	150°C
SSM3K121TU,LF MOSFET N-CH 20V 3.2A ES6 Toshiba Semiconductor and Storage	2,154	-	询价单	数据表	-	3-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3.2A (Ta)	1.5V, 4V	48mOhm @ 2A, 4V	Surface Mount	1V @ 1mA	5.9 nC @ 4 V	20 V	±10V	400 pF @ 10 V	-	-	UFM	-	500mW (Ta)	150°C
SSM5H12TU(TE85L,F) MOSFET N-CH 30V 1.9A UFV Toshiba Semiconductor and Storage	5,087	-	询价单	数据表	U-MOSIII	6-SMD (5 Leads), Flat Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1.9A (Ta)	1.8V, 4V	133mOhm @ 1A, 4V	Surface Mount	1V @ 1mA	1.9 nC @ 4 V	30 V	±12V	123 pF @ 15 V	-	Schottky Diode (Isolated)	UFV	-	500mW (Ta)	150°C (TJ)
TK28V65W,LQ X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	4,966	-	询价单	数据表	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	27.6A (Ta)	10V	120mOhm @ 13.8A, 10V	Surface Mount	3.5V @ 1.6mA	75 nC @ 10 V	650 V	±30V	3000 pF @ 300 V	-	-	4-DFN-EP (8x8)	-	240W (Tc)	150°C
TK090U65Z,RQ DTMOS VI TOLL PD=230W F=1MHZ Toshiba Semiconductor and Storage	2,118	-	询价单	数据表	DTMOSVI	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30A (Ta)	10V	90mOhm @ 15A, 10V	Surface Mount	4V @ 1.27mA	47 nC @ 10 V	650 V	±30V	2780 pF @ 300 V	-	-	TOLL	-	230W (Tc)	150°C

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