Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 8

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPH2R408QM,LQ 80V U-MOS X-H SOP-ADVANCE(N) 2.4 Toshiba Semiconductor and Storage	7,026	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200A (Ta), 120A (Tc)	6V, 10V	2.43mOhm @ 50A, 10V	Surface Mount	3.5V @ 1mA	87 nC @ 10 V	80 V	±20V	8300 pF @ 40 V	-	-	8-SOP Advance (5x5)	-	3W (Ta), 210W (Tc)	175°C
2SK2845(TE16L1,Q) MOSFET N-CH 900V 1A DP Toshiba Semiconductor and Storage	6,592	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	1A (Ta)	10V	9Ohm @ 500mA, 10V	Surface Mount	4V @ 1mA	15 nC @ 10 V	900 V	±30V	350 pF @ 25 V	-	-	PW-MOLD	-	40W (Tc)	150°C (TJ)
SSM6K819R,LF N-CH MOSFET, 100 V, 10 A, 0.0258 Toshiba Semiconductor and Storage	11,897	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	10A (Ta)	4.5V, 10V	25.8mOhm @ 4A, 10V	Surface Mount	2.5V @ 100µA	8.5 nC @ 4.5 V	100 V	±20V	1110 pF @ 15 V	AEC-Q101	-	6-TSOP-F	Automotive	1.5W (Ta)	175°C
SSM3J306T(TE85L,F) MOSFET P-CH 30V 2.4A TSM Toshiba Semiconductor and Storage	8,665	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	2.4A (Ta)	4V, 10V	117mOhm @ 1A, 10V	Surface Mount	-	2.5 nC @ 15 V	30 V	±20V	280 pF @ 15 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
SSM6K818R,LF N-CH MOSFET 30V, +/-20V, 15A ,0. Toshiba Semiconductor and Storage	5,583	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15A (Ta)	4.5V, 10V	12mOhm @ 4A, 4.5V	Surface Mount	2.1V @ 100µA	7.5 nC @ 4.5 V	30 V	±20V	1130 pF @ 15 V	AEC-Q101	-	6-TSOP-F	Automotive	1.5W (Ta)	150°C
SSM6K804R,LF N-CH MOSFET 40V, +/-20V, 12A ,0. Toshiba Semiconductor and Storage	5,180	-	询价单	数据表	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	4.5V, 10V	12mOhm @ 4A, 10V	Surface Mount	2.4V @ 100µA	7.5 nC @ 4.5 V	40 V	±20V	1110 pF @ 20 V	-	-	6-TSOP-F	-	1.5W (Ta)	175°C
TP89R103NL,LQ MOSFET N CH 30V 15A 8SOP Toshiba Semiconductor and Storage	2,200	-	询价单	数据表	U-MOSVIII-H	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	4.5V, 10V	9.1mOhm @ 7.5A, 10V	Surface Mount	2.3V @ 100µA	9.8 nC @ 10 V	30 V	±20V	820 pF @ 15 V	-	-	8-SOP	-	1W (Tc)	150°C (TJ)
TPH6R004PL,LQ MOSFET N-CH 40V 87A/49A 8SOP Toshiba Semiconductor and Storage	2,323	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	4.5V, 10V	6mOhm @ 24.5A, 10V	Surface Mount	2.4V @ 200µA	30 nC @ 10 V	40 V	±20V	2700 pF @ 20 V	-	-	8-SOP Advance (5x5)	-	81W (Tc)	175°C
TPCC8105,L1Q PB-F POWER MOSFET TRANSISTOR TSO Toshiba Semiconductor and Storage	3,023	-	询价单	数据表	U-MOSVI	8-VDFN Exposed Pad	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	23A (Ta)	4.5V, 10V	7.8mOhm @ 11.5A, 10V	Surface Mount	2V @ 500µA	76 nC @ 10 V	30 V	+20V, -25V	3240 pF @ 10 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 30W (Tc)	150°C
TK4P60D,RQ PB-F POWER MOSFET TRANSISTOR DP( Toshiba Semiconductor and Storage	920	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	4A (Ta)	10V	1.7Ohm @ 2A, 10V	Surface Mount	4.4V @ 1mA	12 nC @ 10 V	600 V	±30V	600 pF @ 25 V	-	-	DPAK	-	100W (Tc)	150°C

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