Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 3

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SSM3K15CT,L3F MOSFET N-CH 30V 100MA CST3 Toshiba Semiconductor and Storage	2,779	-	询价单	数据表	-	SC-101, SOT-883	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100mA (Ta)	2.5V, 4V	4Ohm @ 10mA, 4V	Surface Mount	1.5V @ 100µA	-	30 V	±20V	7.8 pF @ 3 V	-	-	CST3	-	100mW (Ta)	150°C
TK1R5R04PB,LXGQ MOSFET N-CH 40V 160A D2PAK Toshiba Semiconductor and Storage	2,900	-	询价单	数据表	U-MOSIX-H	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	160A (Ta)	6V, 10V	1.5mOhm @ 80A, 10V	Surface Mount	3V @ 500µA	103 nC @ 10 V	40 V	±20V	5500 pF @ 10 V	-	-	D2PAK+	-	205W (Tc)	175°C
TK1R4F04PB,LXGQ MOSFET N-CH 40V 160A TO220SM Toshiba Semiconductor and Storage	1,000	-	询价单	数据表	U-MOSIX-H	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	160A (Ta)	6V, 10V	1.9mOhm @ 80A, 6V	Surface Mount	3V @ 500µA	103 nC @ 10 V	40 V	±20V	5500 pF @ 10 V	-	-	TO-220SM(W)	-	205W (Tc)	175°C
TPWR8503NL,L1Q MOSFET N-CH 30V 150A 8DSOP Toshiba Semiconductor and Storage	4,674	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150A (Tc)	4.5V, 10V	0.85mOhm @ 50A, 10V	Surface Mount	2.3V @ 1mA	74 nC @ 10 V	30 V	±20V	6900 pF @ 15 V	-	-	8-DSOP Advance	-	800mW (Ta), 142W (Tc)	150°C (TJ)
TPH3R506PL,LQ MOSFET N-CH 60V 94A 8SOP Toshiba Semiconductor and Storage	4,278	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	94A (Tc)	4.5V, 10V	3.5mOhm @ 47A, 10V	Surface Mount	2.5V @ 500µA	55 nC @ 10 V	60 V	±20V	4420 pF @ 30 V	-	-	8-SOP Advance (5x5)	-	830mW (Ta), 116W (Tc)	175°C
SSM3K316T(TE85L,F) MOSFET N-CH 30V 4A TSM Toshiba Semiconductor and Storage	3,090	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4A (Ta)	1.8V, 10V	53mOhm @ 3A, 10V	Surface Mount	1V @ 1mA	4.3 nC @ 4 V	30 V	±12V	270 pF @ 10 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
SSM6P16FE(TE85L,F) MOSFET P-CH 20V 0.1A ES6 Toshiba Semiconductor and Storage	8,014	-	询价单	数据表	-	SOT-563, SOT-666	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	100mA (Ta)	-	8Ohm @ 10mA, 4V	Surface Mount	-	-	20 V	-	11 pF @ 3 V	-	-	ES6	-	150mW (Ta)	150°C (TJ)
SSM3K303T(TE85L,F) MOSFET N-CH 30V 2.9A TSM Toshiba Semiconductor and Storage	8,283	-	询价单	数据表	π-MOSVII	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.9A (Ta)	4V, 10V	83mOhm @ 1.5A, 10V	Surface Mount	2.6V @ 1mA	3.3 nC @ 4 V	30 V	±20V	180 pF @ 10 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
SSM3K121TU MOSFET N-CH 20V 3.5A SC70 Toshiba Semiconductor and Storage	8,316	-	询价单	数据表	-	3-SMD, Flat Leads	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.2A (Ta)	1.5V, 4V	48mOhm @ 2A, 4V	Surface Mount	1V @ 1mA	5.9 nC @ 4 V	20 V	±10V	400 pF @ 10 V	-	-	UFM	-	500mW (Ta)	150°C
TJ20A10M3(STA4,Q TJ20A10M3(STA4,Q Toshiba Semiconductor and Storage	2,915	-	询价单	数据表	U-MOSVI	TO-220-3 Full Pack	Tube	Active	P-Channel	MOSFET (Metal Oxide)	20A (Ta)	10V	90mOhm @ 10A, 10V	Through Hole	4V @ 1mA	120 nC @ 10 V	100 V	±20V	5500 pF @ 10 V	-	-	TO-220SIS	-	35W (Tc)	150°C

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