Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 9

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPN6R303NC,LQ MOSFET N CH 30V 20A 8TSON-ADV Toshiba Semiconductor and Storage	2,980	-	询价单	数据表	U-MOSVIII	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20A (Ta)	4.5V, 10V	6.3mOhm @ 10A, 10V	Surface Mount	2.3V @ 200µA	24 nC @ 10 V	30 V	±20V	1370 pF @ 15 V	-	-	8-TSON Advance (3.1x3.1)	-	700mW (Ta), 19W (Tc)	150°C (TJ)
TPH8R808QM,LQ 80V UMOS9-H SOP-ADVANCE(N) 8.8MO Toshiba Semiconductor and Storage	9,829	-	询价单	数据表	U-MOSX-H	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	79A (Ta), 52A (Tc)	6V, 10V	8.8mOhm @ 26A, 10V	Surface Mount	3.5V @ 300µA	26 nC @ 10 V	80 V	±20V	1750 pF @ 40 V	-	-	8-SOP Advance (5x5.75)	-	3W (Ta), 109W (Tc)	175°C
TPN6R003NL,LQ MOSFET N CH 30V 27A 8TSON-ADV Toshiba Semiconductor and Storage	2,745	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	27A (Tc)	4.5V, 10V	6mOhm @ 13.5A, 10V	Surface Mount	2.3V @ 200µA	17 nC @ 10 V	30 V	±20V	1400 pF @ 15 V	-	-	8-TSON Advance (3.1x3.1)	-	700mW (Ta), 32W (Tc)	150°C (TJ)
TK13P25D,RQ PB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage	2,026	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	10V	250mOhm @ 6.5A, 10V	Surface Mount	3.5V @ 1mA	25 nC @ 10 V	250 V	±20V	1100 pF @ 100 V	-	-	DPAK	-	96W (Tc)	150°C
TK40S06N1L,LQ MOSFET N-CH 60V 40A DPAK Toshiba Semiconductor and Storage	2,618	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta)	4.5V, 10V	10.5mOhm @ 20A, 10V	Surface Mount	2.5V @ 200µA	26 nC @ 10 V	60 V	±20V	1650 pF @ 10 V	-	-	DPAK+	-	88.2W (Tc)	175°C
TPH6R003NL,LQ MOSFET N CH 30V 38A 8SOP Toshiba Semiconductor and Storage	2,447	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	4.5V, 10V	6mOhm @ 19A, 10V	Surface Mount	2.3V @ 200µA	17 nC @ 10 V	30 V	±20V	1400 pF @ 15 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 34W (Tc)	150°C (TJ)
SSM6J409TU(TE85L,F MOSFET P-CH 20V 9.5A UF6 Toshiba Semiconductor and Storage	4,814	-	询价单	数据表	U-MOSV	6-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	9.5A (Ta)	1.5V, 4.5V	22.1mOhm @ 3A, 4.5V	Surface Mount	1V @ 1mA	15 nC @ 4.5 V	20 V	±8V	1100 pF @ 10 V	-	-	UF6	-	1W (Ta)	150°C (TJ)
TPN4R303NL,L1Q MOSFET N-CH 30V 40A 8TSON Toshiba Semiconductor and Storage	4,990	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	4.3mOhm @ 20A, 10V	Surface Mount	2.3V @ 200µA	14.8 nC @ 10 V	30 V	±20V	1400 pF @ 15 V	-	-	8-TSON Advance (3.1x3.1)	-	700mW (Ta), 34W (Tc)	150°C (TJ)
TPH12008NH,L1Q MOSFET N-CH 80V 24A 8SOP Toshiba Semiconductor and Storage	4,980	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	12.3mOhm @ 12A, 10V	Surface Mount	4V @ 300µA	22 nC @ 10 V	80 V	±20V	1900 pF @ 40 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 48W (Tc)	150°C (TJ)
TPH6R008QM,LQ 80V UMOS9-H SOP-ADVANCE(N) 6MOHM Toshiba Semiconductor and Storage	9,955	-	询价单	数据表	U-MOSX-H	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	59A (Tc)	6V, 10V	6mOhm @ 29.5A, 10V	Surface Mount	3.5V @ 400µA	38 nC @ 10 V	80 V	±20V	2500 pF @ 40 V	-	-	8-SOP Advance (5x5.75)	-	3W (Ta), 135W (Tc)	175°C

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