Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 2

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TPCC8105,L1Q(CM MOSFET P-CH 30V 23A 8TSON Toshiba Semiconductor and Storage	2,514	-	询价单	数据表	U-MOSVI	8-VDFN Exposed Pad	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	23A (Ta)	4.5V, 10V	7.8mOhm @ 11.5A, 10V	Surface Mount	2V @ 500µA	76 nC @ 10 V	30 V	+20V, -25V	3240 pF @ 10 V	-	-	8-TSON Advance (3.3x3.3)	-	700mW (Ta), 30W (Tc)	150°C
TPCC8136.LQ MOSFET P-CH 20V 9.4A 8TSON Toshiba Semiconductor and Storage	3,328	-	询价单	数据表	U-MOSVI	8-PowerVDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	9.4A (Ta)	1.8V, 4.5V	16mOhm @ 9.4A, 4.5V	Surface Mount	1.2V @ 1mA	36 nC @ 5 V	20 V	±12V	2350 pF @ 10 V	-	-	8-TSON Advance (3.1x3.1)	-	700mW (Ta), 18W (Tc)	150°C
TK40J20D,S1F(O MOSFET N-CH 200V 40A TO3P Toshiba Semiconductor and Storage	7,100	-	询价单	数据表	π-MOSVIII	TO-3P-3, SC-65-3	Tray	Active	N-Channel	MOSFET (Metal Oxide)	40A (Ta)	10V	44mOhm @ 20A, 10V	Through Hole	3.5V @ 1mA	100 nC @ 10 V	200 V	±20V	4300 pF @ 100 V	-	-	TO-3P(N)	-	260W (Tc)	150°C
TPCC8104,L1Q MOSFET P-CH 30V 20A 8TSON Toshiba Semiconductor and Storage	7,515	-	询价单	数据表	U-MOSVI	8-PowerVDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20A (Ta)	4.5V, 10V	8.8mOhm @ 10A, 10V	Surface Mount	2V @ 500µA	58 nC @ 10 V	30 V	+20V, -25V	2260 pF @ 10 V	-	-	8-TSON Advance (3.1x3.1)	-	700mW (Ta), 27W (Tc)	150°C
TK12J60W,S1VE(S MOSFET N-CH 600V 11.5A TO3P Toshiba Semiconductor and Storage	6,276	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tray	Active	N-Channel	MOSFET (Metal Oxide)	11.5A (Ta)	10V	300mOhm @ 5.8A, 10V	Through Hole	3.7V @ 600µA	25 nC @ 10 V	600 V	±30V	890 pF @ 300 V	-	-	TO-3P(N)	-	110W (Tc)	150°C
TPCA8128,L1Q MOSFET P-CH 30V 34A 8SOP Toshiba Semiconductor and Storage	6,835	-	询价单	数据表	U-MOSVI	8-PowerVDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	34A (Ta)	4.5V, 10V	4.8mOhm @ 17A, 10V	Surface Mount	2V @ 500µA	115 nC @ 10 V	30 V	+20V, -25V	4800 pF @ 10 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 45W (Tc)	150°C
TK60F10N1L,LXGQ MOSFET N-CH 100V 60A TO220SM Toshiba Semiconductor and Storage	1,750	-	询价单	数据表	U-MOSVIII-H	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Ta)	6V, 10V	6.11mOhm @ 30A, 10V	Surface Mount	3.5V @ 500µA	60 nC @ 10 V	100 V	±20V	4320 pF @ 10 V	-	-	TO-220SM(W)	-	205W (Tc)	175°C
SSM3J14TTE85LF MOSFET P-CH 30V 2.7A TSM Toshiba Semiconductor and Storage	8,786	-	询价单	数据表	U-MOSII	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	2.7A (Ta)	4V, 10V	85mOhm @ 1.35A, 10V	Surface Mount	-	-	30 V	±20V	413 pF @ 15 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
TK430A60F,S4X(S MOSFET N-CH Toshiba Semiconductor and Storage	6,663	-	询价单	数据表	U-MOSIX	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	13A (Ta)	10V	430mOhm @ 6.5A, 10V	Through Hole	4V @ 1.75mA	48 nC @ 10 V	600 V	±30V	1940 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C
TK370A60F,S4X(S MOSFET N-CH Toshiba Semiconductor and Storage	4,152	-	询价单	数据表	U-MOSIX	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	15A (Ta)	10V	370mOhm @ 7.5A, 10V	Through Hole	4V @ 2.04mA	55 nC @ 10 V	600 V	±30V	2200 pF @ 300 V	-	-	TO-220SIS	-	45W (Tc)	150°C

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