富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SSM3J16FU(TE85L,F)

SSM3J16FU(TE85L,F)

SMALL LOW RON PCH MOSFETS VDSS:-

Toshiba Semiconductor and Storage

2,970 -
SSM3J16FU(TE85L,F)

数据表

- SC-70, SOT-323 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 100mA (Ta) 1.5V, 4V 8Ohm @ 10mA, 4V Surface Mount 1.1V @ 100µA - 20 V ±10V 11 pF @ 3 V - - USM - 150mW (Ta) 150°C
SSM5N15FU,LF

SSM5N15FU,LF

MOSFET N-CH 30V 100MA USV

Toshiba Semiconductor and Storage

2,122 -
SSM5N15FU,LF

数据表

π-MOSVI 5-TSSOP, SC-70-5, SOT-353 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V Surface Mount - - 30 V ±20V 7.8 pF @ 3 V - - 5-SSOP - 200mW (Ta) 150°C (TJ)
SSM5N15FE(TE85L,F)

SSM5N15FE(TE85L,F)

MOSFET N-CH 30V 100MA ESV

Toshiba Semiconductor and Storage

2,105 -
SSM5N15FE(TE85L,F)

数据表

π-MOSVI SOT-553 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V Surface Mount 1.5V @ 100µA - 30 V ±20V 7.8 pF @ 3 V - - ESV - 150mW (Ta) 150°C (TJ)
TPC6111(TE85L,F,M)

TPC6111(TE85L,F,M)

MOSFET P-CH 20V 5.5A VS-6

Toshiba Semiconductor and Storage

5,194 -
TPC6111(TE85L,F,M)

数据表

U-MOSV SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.5A (Ta) 1.5V, 4.5V 40mOhm @ 2.8A, 4.5V Surface Mount 1V @ 1mA 10 nC @ 5 V 20 V ±8V 700 pF @ 10 V - - VS-6 (2.9x2.8) - 700mW (Ta) 150°C (TJ)
SSM3J120TU,LF

SSM3J120TU,LF

MOSFET P-CH 20V 4A UFM

Toshiba Semiconductor and Storage

8,000 -
SSM3J120TU,LF

数据表

U-MOSIV 3-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4A (Ta) 1.5V, 4V 38mOhm @ 3A, 4V Surface Mount 1V @ 1mA 22.3 nC @ 4 V 20 V ±8V 1484 pF @ 10 V - - UFM - 500mW (Ta) 150°C (TJ)
SSM3J112TU,LF

SSM3J112TU,LF

MOSFET P-CH 30V 1.1A UFM

Toshiba Semiconductor and Storage

8,968 -
SSM3J112TU,LF

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.1A (Ta) 4V, 10V 390mOhm @ 500mA, 10V Surface Mount 1.8V @ 100µA - 30 V ±20V 86 pF @ 15 V - - UFM - 800mW (Ta) 150°C
SSM3J118TU,LF

SSM3J118TU,LF

PB-F SMALL LOW ON RESISTANCE PCH

Toshiba Semiconductor and Storage

2,194 -
SSM3J118TU,LF

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.4A (Ta) 4V, 10V 240mOhm @ 650mA, 10V Surface Mount 2.6V @ 1mA - 30 V ±20V 137 pF @ 15 V - - UFM - 500mW (Ta) 150°C
SSM6K405TU,LF

SSM6K405TU,LF

MOSFET N-CH 20V 2A UF6

Toshiba Semiconductor and Storage

2,480 -
SSM6K405TU,LF

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 1.5V, 4V 126mOhm @ 1A, 4V Surface Mount 1V @ 1mA 3.4 nC @ 4 V 20 V ±10V 195 pF @ 10 V - - UF6 - 500mW (Ta) 150°C
SSM3J144TU,LF

SSM3J144TU,LF

MOSFET P-CH 20V 3.2A UFM

Toshiba Semiconductor and Storage

2,990 -
SSM3J144TU,LF

数据表

U-MOSVI 3-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.2A (Ta) 1.5V, 4.5V 93mOhm @ 1.5A, 4.5V Surface Mount 1V @ 1mA 4.7 nC @ 4.5 V 20 V +6V, -8V 290 pF @ 10 V - - UFM - 500mW (Ta) 150°C
SSM6J825R,LF

SSM6J825R,LF

P-CH MOSFET -30V, -20/+10V, -4A

Toshiba Semiconductor and Storage

5,947 -
SSM6J825R,LF

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4A (Ta) 4V, 10V 45mOhm @ 4A, 10V Surface Mount 2V @ 250µA 6.2 nC @ 4.5 V 30 V +10V, -20V 492 pF @ 10 V - - 6-TSOP-F - 1.5W (Ta) 150°C
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户