Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 1

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK65S04N1L,LQ MOSFET N-CH 40V 65A DPAK Toshiba Semiconductor and Storage	3,964	-	询价单	数据表	U-MOSVIII-H	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	65A (Ta)	10V	4.3mOhm @ 32.5A, 10V	Surface Mount	2.5V @ 300µA	39 nC @ 10 V	40 V	±20V	2550 pF @ 10 V	-	-	DPAK+	-	107W (Tc)	175°C (TJ)
SSM3K301T(TE85L,F) MOSFET N-CH 20V 3.5A TSM Toshiba Semiconductor and Storage	7,160	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.5A (Ta)	1.8V, 4V	56mOhm @ 2A, 4V	Surface Mount	-	4.8 nC @ 4 V	20 V	±12V	320 pF @ 10 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
SSM3K302T(TE85L,F) MOSFET N-CH 30V 3A TSM Toshiba Semiconductor and Storage	3,723	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	3A (Ta)	1.8V, 4V	71mOhm @ 2A, 4V	Surface Mount	-	4.3 nC @ 4 V	30 V	±12V	270 pF @ 10 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
SSM3K309T(TE85L,F) MOSFET N-CH 20V 4.7A TSM Toshiba Semiconductor and Storage	3,135	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.7A (Ta)	1.8V, 4V	31mOhm @ 4A, 4V	Surface Mount	-	-	20 V	±12V	1020 pF @ 10 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
SSM3K310T(TE85L,F) MOSFET N-CH 20V 5A TSM Toshiba Semiconductor and Storage	2,507	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	5A (Ta)	1.5V, 4V	28mOhm @ 4A, 4V	Surface Mount	-	14.8 nC @ 4 V	20 V	±10V	1120 pF @ 10 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
SSM3J129TU(TE85L) MOSFET P-CH 20V 4.6A UFM Toshiba Semiconductor and Storage	8,608	-	询价单	数据表	U-MOSV	3-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4.6A (Ta)	1.5V, 4.5V	46mOhm @ 3A, 4.5V	Surface Mount	1V @ 1mA	8.1 nC @ 4.5 V	20 V	±8V	640 pF @ 10 V	-	-	UFM	-	500mW (Ta)	150°C (TJ)
SSM3J321T(TE85L,F) MOSFET P-CH 20V 5.2A TSM Toshiba Semiconductor and Storage	5,882	-	询价单	数据表	U-MOSV	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	5.2A (Ta)	1.5V, 4.5V	46mOhm @ 3A, 4.5V	Surface Mount	1V @ 1mA	8.1 nC @ 4.5 V	20 V	±8V	640 pF @ 10 V	-	-	TSM	-	700mW (Ta)	150°C (TJ)
XPH4R10ANB,L1XHQ MOSFET N-CH 100V 70A 8SOP Toshiba Semiconductor and Storage	34,035	-	询价单	数据表	U-MOSVIII-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	70A (Ta)	6V, 10V	4.1mOhm @ 35A, 10V	Surface Mount	3.5V @ 1mA	75 nC @ 10 V	100 V	±20V	4970 pF @ 10 V	-	-	8-SOP Advance (5x5)	-	960mW (Ta), 170W (Tc)	175°C
TPCA8109(TE12L1,V MOSFET P-CH 30V 24A 8SOP Toshiba Semiconductor and Storage	9,629	-	询价单	数据表	U-MOSVI	8-PowerVDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	24A (Ta)	4.5V, 10V	9mOhm @ 12A, 10V	Surface Mount	2V @ 500µA	56 nC @ 10 V	30 V	+20V, -25V	2400 pF @ 10 V	-	-	8-SOP Advance (5x5)	-	1.6W (Ta), 30W (Tc)	150°C
TPCC8104,L1Q(CM MOSFET P-CH 30V 20A 8TSON Toshiba Semiconductor and Storage	5,080	-	询价单	数据表	U-MOSVI	8-PowerVDFN	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20A (Ta)	4.5V, 10V	8.8mOhm @ 10A, 10V	Surface Mount	2V @ 500µA	58 nC @ 10 V	30 V	+20V, -25V	2260 pF @ 10 V	-	-	8-TSON Advance (3.1x3.1)	-	700mW (Ta), 27W (Tc)	150°C

共 814 条记录«上一页12 3 4...82 下一页»