| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TK28V65W5,LQX35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage |
2,500 | - |
|
数据表 |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 27.6A (Ta) | 10V | 140mOhm @ 13.8A, 10V | Surface Mount | 4.5V @ 1.6mA | 90 nC @ 10 V | 650 V | ±30V | 3000 pF @ 300 V | - | - | 4-DFN-EP (8x8) | - | 240W (Tc) | 150°C |
|
SSM3K59CTB,L3FMOSFET N-CH 40V 2A CST3B Toshiba Semiconductor and Storage |
6,702 | - |
|
数据表 |
U-MOSVII-H | 3-SMD, No Lead | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2A (Ta) | 1.8V, 8V | 215mOhm @ 1A, 8V | Surface Mount | 1.2V @ 1mA | 1.1 nC @ 4.2 V | 40 V | ±12V | 130 pF @ 10 V | - | - | CST3B | - | 1W (Ta) | 150°C (TJ) |
|
SSM3J144TU,LXHFSMOS P-CH VDSS:-20V VGSS:-8/+6V Toshiba Semiconductor and Storage |
4,170 | - |
|
数据表 |
U-MOSVI | 3-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 3.2A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | Surface Mount | 1V @ 1mA | 4.7 nC @ 4.5 V | 20 V | +6V, -8V | 290 pF @ 10 V | AEC-Q101 | - | UFM | Automotive | 500mW (Ta) | 150°C |
|
TPC8115(TE12L,Q,M)MOSFET P-CH 20V 10A 8SOP Toshiba Semiconductor and Storage |
8,077 | - |
|
数据表 |
U-MOSIV | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 1.8V, 4.5V | 10mOhm @ 5A, 4.5V | Surface Mount | 1.2V @ 200µA | 115 nC @ 5 V | 20 V | ±8V | 9130 pF @ 10 V | - | - | 8-SOP (5.5x6.0) | - | 1W (Ta) | 150°C (TJ) |
|
TPH4R008NH1,LQ80V U-MOS VIII-H SOP-ADVANCE(N) Toshiba Semiconductor and Storage |
4,581 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 146A (Ta), 116A (Tc) | 10V | 4mOhm @ 50A, 10V | Surface Mount | 4V @ 1mA | 59 nC @ 10 V | 80 V | ±20V | 5300 pF @ 40 V | - | - | 8-SOP Advance (5x5.75) | - | 2.5W (Ta), 170W (Tc) | 150°C |
|
SSM3K315T(TE85L,F)MOSFET N-CH 30V 6A TSM Toshiba Semiconductor and Storage |
4,409 | - |
|
数据表 |
U-MOSIV | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Ta) | 4.5V, 10V | 27.6mOhm @ 4A, 10V | Surface Mount | 2.5V @ 1mA | 10.1 nC @ 10 V | 30 V | ±20V | 450 pF @ 15 V | - | - | TSM | - | 700mW (Ta) | 150°C (TJ) |
|
TW083N65C,S1FG3 650V SIC-MOSFET TO-247 83MOH Toshiba Semiconductor and Storage |
142 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 30A (Tc) | 18V | 113mOhm @ 15A, 18V | Through Hole | 5V @ 600µA | 28 nC @ 18 V | 650 V | +25V, -10V | 873 pF @ 400 V | - | - | TO-247 | - | 111W (Tc) | 175°C |
|
2SJ360(F)MOSFET P-CH 60V 1A PW-MINI Toshiba Semiconductor and Storage |
8,434 | - |
|
数据表 |
- | TO-243AA | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 1A (Ta) | 4V, 10V | 730mOhm @ 500mA, 10V | Surface Mount | 2V @ 1mA | 6.5 nC @ 10 V | 60 V | ±20V | 155 pF @ 10 V | - | - | PW-MINI | - | 500mW (Ta) | 150°C (TJ) |
|
SSM3K16FS,LFSMALL LOW ON RESISTANCE NCH MOSF Toshiba Semiconductor and Storage |
2,077 | - |
|
数据表 |
- | SC-75, SOT-416 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | Surface Mount | 1.1V @ 100µA | - | 20 V | ±10V | 9.3 pF @ 3 V | - | - | SSM | - | 100mW (Ta) | 150°C |
|
SSM3K16CTC,L3FMOSFET N-CH 20V 200MA CST3C Toshiba Semiconductor and Storage |
8,505 | - |
|
数据表 |
- | SC-101, SOT-883 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | Surface Mount | 1V @ 1mA | - | 20 V | ±10V | 12 pF @ 10 V | - | - | CST3C | - | 500mW (Ta) | 150°C |