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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TK28V65W5,LQ

TK28V65W5,LQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,500 -
TK28V65W5,LQ

数据表

- 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27.6A (Ta) 10V 140mOhm @ 13.8A, 10V Surface Mount 4.5V @ 1.6mA 90 nC @ 10 V 650 V ±30V 3000 pF @ 300 V - - 4-DFN-EP (8x8) - 240W (Tc) 150°C
SSM3K59CTB,L3F

SSM3K59CTB,L3F

MOSFET N-CH 40V 2A CST3B

Toshiba Semiconductor and Storage

6,702 -
SSM3K59CTB,L3F

数据表

U-MOSVII-H 3-SMD, No Lead Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 1.8V, 8V 215mOhm @ 1A, 8V Surface Mount 1.2V @ 1mA 1.1 nC @ 4.2 V 40 V ±12V 130 pF @ 10 V - - CST3B - 1W (Ta) 150°C (TJ)
SSM3J144TU,LXHF

SSM3J144TU,LXHF

SMOS P-CH VDSS:-20V VGSS:-8/+6V

Toshiba Semiconductor and Storage

4,170 -
SSM3J144TU,LXHF

数据表

U-MOSVI 3-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.2A (Ta) 1.5V, 4.5V 93mOhm @ 1.5A, 4.5V Surface Mount 1V @ 1mA 4.7 nC @ 4.5 V 20 V +6V, -8V 290 pF @ 10 V AEC-Q101 - UFM Automotive 500mW (Ta) 150°C
TPC8115(TE12L,Q,M)

TPC8115(TE12L,Q,M)

MOSFET P-CH 20V 10A 8SOP

Toshiba Semiconductor and Storage

8,077 -
TPC8115(TE12L,Q,M)

数据表

U-MOSIV 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 10A (Ta) 1.8V, 4.5V 10mOhm @ 5A, 4.5V Surface Mount 1.2V @ 200µA 115 nC @ 5 V 20 V ±8V 9130 pF @ 10 V - - 8-SOP (5.5x6.0) - 1W (Ta) 150°C (TJ)
TPH4R008NH1,LQ

TPH4R008NH1,LQ

80V U-MOS VIII-H SOP-ADVANCE(N)

Toshiba Semiconductor and Storage

4,581 -
TPH4R008NH1,LQ

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 146A (Ta), 116A (Tc) 10V 4mOhm @ 50A, 10V Surface Mount 4V @ 1mA 59 nC @ 10 V 80 V ±20V 5300 pF @ 40 V - - 8-SOP Advance (5x5.75) - 2.5W (Ta), 170W (Tc) 150°C
SSM3K315T(TE85L,F)

SSM3K315T(TE85L,F)

MOSFET N-CH 30V 6A TSM

Toshiba Semiconductor and Storage

4,409 -
SSM3K315T(TE85L,F)

数据表

U-MOSIV TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 27.6mOhm @ 4A, 10V Surface Mount 2.5V @ 1mA 10.1 nC @ 10 V 30 V ±20V 450 pF @ 15 V - - TSM - 700mW (Ta) 150°C (TJ)
TW083N65C,S1F

TW083N65C,S1F

G3 650V SIC-MOSFET TO-247 83MOH

Toshiba Semiconductor and Storage

142 -
TW083N65C,S1F

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 30A (Tc) 18V 113mOhm @ 15A, 18V Through Hole 5V @ 600µA 28 nC @ 18 V 650 V +25V, -10V 873 pF @ 400 V - - TO-247 - 111W (Tc) 175°C
2SJ360(F)

2SJ360(F)

MOSFET P-CH 60V 1A PW-MINI

Toshiba Semiconductor and Storage

8,434 -
2SJ360(F)

数据表

- TO-243AA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 1A (Ta) 4V, 10V 730mOhm @ 500mA, 10V Surface Mount 2V @ 1mA 6.5 nC @ 10 V 60 V ±20V 155 pF @ 10 V - - PW-MINI - 500mW (Ta) 150°C (TJ)
SSM3K16FS,LF

SSM3K16FS,LF

SMALL LOW ON RESISTANCE NCH MOSF

Toshiba Semiconductor and Storage

2,077 -
SSM3K16FS,LF

数据表

- SC-75, SOT-416 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100mA (Ta) 1.5V, 4V 3Ohm @ 10mA, 4V Surface Mount 1.1V @ 100µA - 20 V ±10V 9.3 pF @ 3 V - - SSM - 100mW (Ta) 150°C
SSM3K16CTC,L3F

SSM3K16CTC,L3F

MOSFET N-CH 20V 200MA CST3C

Toshiba Semiconductor and Storage

8,505 -
SSM3K16CTC,L3F

数据表

- SC-101, SOT-883 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 200mA (Ta) 1.5V, 4.5V 2.2Ohm @ 100mA, 4.5V Surface Mount 1V @ 1mA - 20 V ±10V 12 pF @ 10 V - - CST3C - 500mW (Ta) 150°C
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