Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 7

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFD110 1A, 100V, 0.600 OHM, N-CHANNEL Harris Corporation	43,868	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1A (Ta)	10V	540mOhm @ 600mA, 10V	Through Hole	4V @ 250µA	8.3 nC @ 10 V	100 V	±20V	180 pF @ 25 V	-	-	4-DIP, Hexdip, HVMDIP	-	1.3W (Ta)	-55°C ~ 175°C (TJ)
RFP4N05 N-CHANNEL POWER MOSFET Harris Corporation	6,728	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	800mOhm @ 4A, 10V	Through Hole	4V @ 250µA	-	50 V	±20V	200 pF @ 25 V	-	-	TO-220	-	25W (Tc)	-55°C ~ 150°C (TJ)
RFP8N20 N-CHANNEL POWER MOSFET Harris Corporation	2,366	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	500mOhm @ 4A, 10V	Through Hole	4V @ 1mA	-	200 V	±20V	750 pF @ 25 V	-	-	TO-220AB	-	60W (Tc)	-55°C ~ 150°C (TJ)
RFP12N06RLE N-CHANNEL POWER MOSFET Harris Corporation	13,334	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	4.5V, 10V	63mOhm @ 18A, 10V	Through Hole	3V @ 250µA	15 nC @ 10 V	60 V	±16V	485 pF @ 25 V	-	-	TO-220	-	49W (Tc)	-55°C ~ 175°C (TJ)
IRF820 2.5A, 500V, 3.000 OHM, N-CHANNEL Harris Corporation	3,895	-	询价单	数据表	PowerMESH™ II	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	3Ohm @ 1.5A, 10V	Through Hole	4V @ 250µA	17 nC @ 10 V	500 V	±30V	315 pF @ 25 V	-	-	TO-220AB	-	80W (Tc)	150°C (TJ)
RFP2N20 N-CHANNEL, MOSFET Harris Corporation	1,552	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	10V	3.5Ohm @ 2A, 10V	Through Hole	4V @ 250µA	-	200 V	±20V	200 pF @ 25 V	-	-	TO-220AB	-	25W (Tc)	-55°C ~ 150°C (TJ)
RFD16N05LSM N-CHANNEL POWER MOSFET Harris Corporation	1,356	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	4V, 5V	47mOhm @ 16A, 5V	Surface Mount	2V @ 250mA	80 nC @ 10 V	50 V	±10V	-	-	-	TO-252AA	-	60W (Tc)	-55°C ~ 150°C (TJ)
BUZ76A N-CHANNEL POWER MOSFET Harris Corporation	10,000	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.6A (Tc)	10V	2.5Ohm @ 1.5A, 10V	Through Hole	4V @ 1mA	-	400 V	±20V	500 pF @ 25 V	-	-	TO-220-3	-	40W (Tc)	-55°C ~ 150°C (TJ)
RFP15N08L N-CHANNEL POWER MOSFET Harris Corporation	49,688	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	5V	140mOhm @ 7.5A, 5V	Through Hole	2.5V @ 1mA	80 nC @ 10 V	80 V	±10V	-	-	-	TO-220	-	72W (Tc)	-55°C ~ 175°C (TJ)
IRF521 N-CHANNEL POWER MOSFET Harris Corporation	25,650	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	9.2A (Tc)	10V	270mOhm @ 5.6A, 10V	Through Hole	4V @ 250µA	15 nC @ 10 V	80 V	±20V	350 pF @ 25 V	-	-	TO-220	-	60W (Tc)	-55°C ~ 175°C (TJ)

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