Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 4

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
BUZ73A MOSFET N-CH 200V 5.5A TO220-3 Harris Corporation	12,259	-	询价单	数据表	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	5.5A (Tc)	10V	600mOhm @ 4.5A, 10V	Through Hole	4V @ 1mA	-	200 V	±20V	530 pF @ 25 V	-	-	PG-TO220-3	-	40W (Tc)	-55°C ~ 150°C (TJ)
RFD20N03SM N-CHANNEL POWER MOSFET Harris Corporation	8,441	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	25mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	75 nC @ 20 V	30 V	±20V	1150 pF @ 25 V	-	-	TO-252 (DPAK)	-	90W (Tc)	-55°C ~ 175°C (TJ)
IRF621R N-CHANNEL POWER MOSFET Harris Corporation	6,837	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	10V	800mOhm @ 2.5A, 10V	Through Hole	4V @ 250µA	15 nC @ 10 V	150 V	±20V	450 pF @ 25 V	-	-	TO-220AB	-	40W (Tc)	-55°C ~ 150°C (TJ)
RFD15N06LESM N-CHANNEL POWER MOSFET Harris Corporation	4,077	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	15A	-	-	Surface Mount	-	-	60 V	-	-	-	-	TO-252 (DPAK)	-	-	-
IRFU221 N-CHANNEL POWER MOSFET Harris Corporation	2,419	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.6A (Tc)	10V	800mOhm @ 2.4A, 10V	Through Hole	4V @ 250µA	18 nC @ 10 V	150 V	±20V	330 pF @ 25 V	-	-	IPAK	-	50W (Tc)	-55°C ~ 150°C (TJ)
RFP15N06 N-CHANNEL POWER MOSFET Harris Corporation	27,099	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	140mOhm @ 7.5A, 10V	Through Hole	4V @ 1mA	-	60 V	±20V	850 pF @ 25 V	-	-	TO-220-3	-	90W (Tc)	-55°C ~ 150°C (TJ)
HUF75332S3S N-CHANNEL POWER MOSFET Harris Corporation	2,788	-	询价单	数据表	UltraFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	52A (Tc)	10V	19mOhm @ 52A, 10V	Surface Mount	4V @ 250µA	85 nC @ 20 V	55 V	±20V	1300 pF @ 25 V	-	-	TO-263 (D2PAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
IRF823 N-CHANNEL POWER MOSFET Harris Corporation	2,284	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.2A (Tc)	10V	4Ohm @ 1.4A, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	450 V	±20V	360 pF @ 25 V	-	-	TO-220AB	-	50W (Tc)	-55°C ~ 150°C (TJ)
RFP23N06LE N-CHANNEL, MOSFET Harris Corporation	1,486	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF9622 P-CHANNEL POWER MOSFET Harris Corporation	1,128	-	询价单	数据表	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	3A (Tc)	10V	2.4Ohm @ 1.5A, 10V	Through Hole	4V @ 250µA	22 nC @ 10 V	200 V	±20V	350 pF @ 25 V	-	-	TO-220	-	40W (Tc)	-55°C ~ 150°C (TJ)

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