Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 3

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFR121 N-CHANNEL POWER MOSFET Harris Corporation	2,880	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	8.4A	-	-	Surface Mount	-	-	80 V	-	-	-	-	TO-252 (DPAK)	-	-	-
RFD14N06LSM9A N-CHANNEL POWER MOSFET Harris Corporation	2,500	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFD112 SMALL SIGNAL N-CHANNEL MOSFET Harris Corporation	1,371	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	800mA (Tc)	10V	800mOhm @ 800mA, 10V	Through Hole	4V @ 250µA	7 nC @ 10 V	100 V	±20V	135 pF @ 25 V	-	-	4-DIP, Hexdip	-	1W (Tc)	-55°C ~ 150°C (TJ)
IRFR1219A N-CHANNEL POWER MOSFET Harris Corporation	2,500	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFR91109A P-CHANNEL POWER MOSFET Harris Corporation	2,500	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFR321 N-CHANNEL POWER MOSFET Harris Corporation	1,802	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.1A (Ta)	10V	1.8Ohm @ 1.7A, 10V	Surface Mount	4V @ 250µA	20 nC @ 10 V	350 V	±20V	350 pF @ 25 V	-	-	TO-252 (DPAK)	-	50W (Tc)	-55°C ~ 150°C (TJ)
RF1K49211 N-CHANNEL POWER MOSFET Harris Corporation	1,588	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	7A	-	-	Surface Mount	-	-	12 V	-	-	-	-	8-SOIC	-	-	-
RFD20N03 N-CHANNEL POWER MOSFET Harris Corporation	10,550	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	25mOhm @ 20A, 10V	Through Hole	4V @ 250µA	75 nC @ 20 V	30 V	±20V	1150 pF @ 25 V	-	-	IPAK	-	90W (Tc)	-55°C ~ 175°C (TJ)
IRF710 PFET, 2A I(D), 400V, 3.6OHM, 1-E Harris Corporation	4,630	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	10V	3.6Ohm @ 1.1A, 10V	Through Hole	4V @ 250µA	12 nC @ 10 V	400 V	±20V	135 pF @ 25 V	-	-	TO-220AB	-	36W (Tc)	-55°C ~ 150°C (TJ)
IRF621 N-CHANNEL POWER MOSFET Harris Corporation	13,250	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	10V	800mOhm @ 2.5A, 10V	Through Hole	4V @ 250µA	15 nC @ 10 V	150 V	±20V	450 pF @ 25 V	-	-	TO-220-3	-	40W (Tc)	-55°C ~ 150°C (TJ)

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