Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 8

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
RFD14N06 N-CHANNEL POWER MOSFET Harris Corporation	3,664	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	100mOhm @ 14A, 10V	Through Hole	4V @ 250µA	40 nC @ 20 V	60 V	±20V	570 pF @ 25 V	-	-	IPAK	-	48W (Tc)	-55°C ~ 175°C (TJ)
HUF75333S3 MOSFET N-CH 55V 66A D2PAK Harris Corporation	1,257	-	询价单	数据表	UltraFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	66A (Tc)	-	16mOhm @ 66A, 10V	Surface Mount	4V @ 250µA	85 nC @ 20 V	55 V	±20V	1300 pF @ 25 V	-	-	TO-263 (D2PAK)	-	150W (Tc)	-55°C ~ 175°C (TJ)
IRFD9113 -0.6A, -80V, 1.6 OHM, P-CHANNEL Harris Corporation	1,090	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	600mA (Ta)	-	1.6Ohm @ 300mA, 10V	Through Hole	-	15 nC @ 15 V	60 V	-	250 pF @ 25 V	-	-	4-DIP, Hexdip, HVMDIP	-	-	-
IRF9533 P-CHANNEL POWER MOSFET Harris Corporation	11,834	-	询价单	数据表	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	10A (Tc)	10V	400mOhm @ 6.5A, 10V	Through Hole	4V @ 250µA	45 nC @ 10 V	80 V	±20V	500 pF @ 25 V	-	-	TO-220AB	-	75W (Tc)	-55°C ~ 150°C (TJ)
IRFD213 MOSFET N-CH 250V 450MA 4DIP Harris Corporation	5,563	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	450mA (Ta)	-	2Ohm @ 270mA, 10V	Through Hole	4V @ 250µA	8.2 nC @ 10 V	250 V	-	140 pF @ 25 V	-	-	4-HVMDIP	-	-	-55°C ~ 150°C (TJ)
RF1S23N06LESM N-CHANNEL POWER MOSFET Harris Corporation	5,549	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	23A	-	-	Surface Mount	-	-	60 V	-	-	-	-	TO-263AB	-	-	-
HUF75329P3 MOSFET N-CH 55V 49A TO220-3 Harris Corporation	3,077	-	询价单	数据表	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	49A (Tc)	10V	24mOhm @ 49A, 10V	Through Hole	4V @ 250µA	75 nC @ 20 V	55 V	±20V	1060 pF @ 25 V	-	-	TO-220-3	-	128W (Tc)	-55°C ~ 175°C (TJ)
RF1S17N06LSM LOGIC LEVEL GATE (5V) DEVICE Harris Corporation	4,000	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	17A	-	-	Surface Mount	-	-	60 V	-	-	-	-	TO-263AB	-	-	-
RF1S25N06SM N-CHANNEL POWER MOSFET Harris Corporation	3,005	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	25A	-	-	Surface Mount	-	-	60 V	-	-	-	-	TO-263AB	-	-	-
RFD16N03LSM9A N-CHANNEL POWER MOSFET Harris Corporation	1,540	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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