| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IRF9510MOSFET P-CH 100V 4A TO220AB Harris Corporation |
1,187 | - |
|
数据表 |
- | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | Through Hole | 4V @ 250µA | 8.7 nC @ 10 V | 100 V | ±20V | 200 pF @ 25 V | - | - | TO-220AB | - | 43W (Tc) | -55°C ~ 175°C (TJ) |
|
BUZ71N-CHANNEL POWER MOSFET Harris Corporation |
14,750 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 100mOhm @ 9A, 10V | Through Hole | 4V @ 1mA | - | 50 V | ±20V | 650 pF @ 25 V | - | - | TO-220-3 | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
RFD10N05SM10A, 50V, N-CHANNEL, Harris Corporation |
11,858 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | - | - | - | Surface Mount | - | - | 50 V | - | - | - | - | TO-252 (DPAK) | - | - | - |
|
RFP2N15N-CHANNEL, MOSFET Harris Corporation |
2,411 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 10V | 1.75Ohm @ 2A, 10V | Through Hole | 4V @ 250µA | - | 150 V | ±20V | 200 pF @ 25 V | - | - | TO-220-3 | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
RFP50N06R403450A, 60V, 0.022 OHM, N-CHANNEL Harris Corporation |
2,400 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRFD113MOSFET N-CH 60V 800MA 4DIP Harris Corporation |
46,955 | - |
|
数据表 |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | Through Hole | 4V @ 250µA | 7 nC @ 10 V | 60 V | ±20V | 200 pF @ 25 V | - | - | 4-HVMDIP | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
RF1S25N06SM9AN-CHANNEL POWER MOSFET Harris Corporation |
4,000 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RFP45N06LEN-CHANNEL POWER MOSFET Harris Corporation |
1,569 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 5V | 28mOhm @ 45A, 5V | Through Hole | 2V @ 250µA | 135 nC @ 10 V | 60 V | ±10V | 2150 pF @ 25 V | - | - | TO-220 | - | 142W (Tc) | -55°C ~ 175°C (TJ) |
|
RF1S23N06LE23A, 60V, 0.065OHM, N-CHANNEL, Harris Corporation |
2,400 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 23A (Tc) | 5V | 65mOhm @ 23A, 5V | Through Hole | 2V @ 250µA | 48 nC @ 10 V | 60 V | ±10V | 850 pF @ 25 V | - | - | I2PAK (TO-262) | - | 75W (Tc) | -55°C ~ 175°C (TJ) |
|
RFP45N03LN-CHANNEL POWER MOSFET Harris Corporation |
41,855 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 5V | 22mOhm @ 45A, 5V | Through Hole | 2V @ 250µA | 60 nC @ 10 V | 30 V | ±10V | 1650 pF @ 25 V | - | - | TO-220-3 | - | 90W (Tc) | -55°C ~ 175°C (TJ) |