Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 6

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
RFP45N02L N-CHANNEL POWER MOSFET Harris Corporation	1,871	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	45A (Tc)	5V	22mOhm @ 45A, 5V	Through Hole	2V @ 250µA	60 nC @ 10 V	20 V	±10V	1300 pF @ 15 V	-	-	TO-220	-	90W (Tc)	-55°C ~ 175°C (TJ)
RFD16N02L 16A, 20V, 0.022 OHM, N-CHANNEL L Harris Corporation	1,793	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	5V	22mOhm @ 16A, 5V	Through Hole	2V @ 250µA	60 nC @ 10 V	20 V	±10V	1300 pF @ 20 V	-	-	IPAK	-	90W (Tc)	-55°C ~ 175°C (TJ)
IRF712S2497 1.7A, 400V, 5OHM, N-CHANNEL, Harris Corporation	1,600	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RFP2P10 P-CHANNEL POWER MOSFET Harris Corporation	11,516	-	询价单	数据表	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	2A (Tc)	10V	3.5Ohm @ 1A, 10V	Through Hole	4V @ 1mA	-	100 V	±20V	150 pF @ 25 V	-	-	TO-220-3	-	25W (Tc)	-55°C ~ 150°C (TJ)
HUF75307D3 MOSFET N-CH 55V 15A IPAK Harris Corporation	7,768	-	询价单	数据表	UltraFET™	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	90mOhm @ 15A, 10V	Through Hole	4V @ 250µA	20 nC @ 20 V	55 V	±20V	250 pF @ 25 V	-	-	IPAK	-	45W (Tc)	-55°C ~ 175°C (TJ)
RF1S15N06SM N-CHANNEL POWER MOSFET Harris Corporation	4,894	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	15A	-	-	Surface Mount	-	-	60 V	-	-	-	-	TO-263AB	-	-	-
IRFD1Z3 SMALL SIGNAL N-CHANNEL MOSFET Harris Corporation	12,328	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	400mA (Tc)	10V	3.2Ohm @ 250mA, 10V	Through Hole	4V @ 250µA	3 nC @ 10 V	60 V	±20V	50 pF @ 25 V	-	-	4-DIP, Hexdip	-	1W (Tc)	-55°C ~ 150°C (TJ)
RF1S45N02LSM9A N-CHANNEL POWER MOSFET Harris Corporation	2,400	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RFP6P10 P-CHANNEL POWER MOSFET Harris Corporation	41,954	-	询价单	数据表	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	600mOhm @ 6A, 10V	Through Hole	4V @ 250µA	-	100 V	±20V	800 pF @ 25 V	-	-	TO-220AB	-	60W (Tc)	-55°C ~ 150°C (TJ)
IRF9512 P-CHANNEL POWER MOSFET Harris Corporation	4,210	-	询价单	数据表	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	2.5A (Tc)	10V	1.6Ohm @ 1.5A, 10V	Through Hole	4V @ 250µA	11 nC @ 10 V	100 V	±20V	180 pF @ 25 V	-	-	TO-220AB	-	20W (Tc)	-55°C ~ 150°C (TJ)

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