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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFR221N-CHANNEL POWER MOSFET Harris Corporation |
1,075 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 4.6A (Tc) | 10V | 800mOhm @ 2.4A, 10V | Surface Mount | 4V @ 250µA | 18 nC @ 10 V | 150 V | ±20V | 330 pF @ 25 V | - | - | TO-252 (DPAK) | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
RFP30N6LER454130A, 60V, LOGIC LEVEL N CHANNEL Harris Corporation |
4,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RLP03N06CLEN-CHANNEL POWER MOSFET Harris Corporation |
3,673 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRF822N-CHANNEL POWER MOSFET Harris Corporation |
20,598 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 2.2A (Tc) | 10V | 4Ohm @ 1.4A, 10V | Through Hole | 4V @ 250µA | 19 nC @ 10 V | 500 V | ±20V | 360 pF @ 25 V | - | - | TO-220AB | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
|
RFP2N12N-CHANNEL, MOSFET Harris Corporation |
1,550 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 10V | 1.75Ohm @ 2A, 10V | Through Hole | 4V @ 250µA | - | 120 V | ±20V | 200 pF @ 25 V | - | - | TO-220-3 | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRFR422N-CHANNEL POWER MOSFET Harris Corporation |
1,139 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 2.2A (Tc) | 10V | 4Ohm @ 1.3A, 10V | Surface Mount | 4V @ 250µA | 19 nC @ 10 V | 500 V | ±20V | 350 pF @ 25 V | - | - | TO-252 (DPAK) | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
|
HUF76121S3N-CHANNEL POWER MOSFET Harris Corporation |
3,600 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRF711N-CHANNEL POWER MOSFET Harris Corporation |
6,031 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 10V | 3.6Ohm @ 1.1A, 10V | Through Hole | 4V @ 250µA | 12 nC @ 10 V | 350 V | ±20V | 135 pF @ 25 V | - | - | TO-220-3 | - | 36W (Tc) | -55°C ~ 150°C (TJ) |
|
RFD7N10LEN-CHANNEL POWER MOSFET Harris Corporation |
5,942 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 5V | 300mOhm @ 7A, 5V | Through Hole | 2V @ 250µA | 150 nC @ 10 V | 100 V | +10V, -8V | 360 pF @ 25 V | - | - | TO-220-3 | - | 47W (Tc) | -55°C ~ 175°C (TJ) |
|
|
RLD03N06CLESM9AN-CHANNEL POWER MOSFET Harris Corporation |
2,500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
