Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 10

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF9532 P-CHANNEL POWER MOSFET Harris Corporation	19,101	-	询价单	数据表	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	10A (Tc)	10V	400mOhm @ 6.5A, 10V	Through Hole	4V @ 250µA	45 nC @ 10 V	100 V	±20V	500 pF @ 25 V	-	-	TO-220AB	-	75W (Tc)	-55°C ~ 150°C (TJ)
IRF723 N-CHANNEL POWER MOSFET Harris Corporation	77,397	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.8A (Tc)	10V	2.5Ohm @ 1.8A, 10V	Through Hole	4V @ 250µA	20 nC @ 10 V	350 V	±20V	360 pF @ 25 V	-	-	TO-220	-	50W (Tc)	-55°C ~ 150°C (TJ)
IRFD9123 MOSFET P-CH 100V 1A 4DIP Harris Corporation	15,501	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	1A (Ta)	-	600mOhm @ 600mA, 10V	Through Hole	4V @ 250µA	18 nC @ 10 V	100 V	-	390 pF @ 25 V	-	-	4-HVMDIP	-	-	-
IRF631 N-CHANNEL POWER MOSFET Harris Corporation	5,221	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	10V	400mOhm @ 5A, 10V	Through Hole	4V @ 250µA	30 nC @ 10 V	150 V	±20V	600 pF @ 25 V	-	-	TO-220AB	-	75W (Tc)	-55°C ~ 150°C (TJ)
RF1S22N10SM N-CHANNEL POWER MOSFET Harris Corporation	3,853	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	22A	-	-	Surface Mount	-	-	100 V	-	-	-	-	TO-263AB	-	-	-
IRF740S2515 10A, 400V, 0.55OHM, N-CHANNEL, P Harris Corporation	2,200	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HUF76129P3 N-CHANNEL POWER MOSFET Harris Corporation	23,975	-	询价单	数据表	UltraFET™	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	4.5V, 10V	16mOhm @ 56A, 10V	Through Hole	3V @ 250µA	45 nC @ 10 V	30 V	±20V	1350 pF @ 25 V	-	-	TO-220AB	-	105W (Tc)	-40°C ~ 150°C (TJ)
HUF75333P3 MOSFET N-CH 55V 66A TO220-3 Harris Corporation	2,197	-	询价单	数据表	UltraFET™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	66A (Tc)	-	16mOhm @ 66A, 10V	Through Hole	4V @ 250µA	85 nC @ 20 V	55 V	±20V	1300 pF @ 25 V	-	-	TO-220-3	-	150W (Tc)	-55°C ~ 175°C (TJ)
IRF9522 P-CHANNEL POWER MOSFET Harris Corporation	1,768	-	询价单	数据表	-	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	5A (Tc)	10V	800mOhm @ 3.5A, 10V	Through Hole	4V @ 250µA	22 nC @ 10 V	100 V	±20V	300 pF @ 25 V	-	-	TO-220AB	-	40W (Tc)	-55°C ~ 150°C (TJ)
RLD03N06CLESM N-CHANNEL POWER MOSFET Harris Corporation	1,025	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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