Harris Corporation|场效应晶体管（FETs）、MOSFETs - 页 2

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
RFD8P06E P-CHANNEL POWER MOSFET Harris Corporation	2,278	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RFD3N08L N-CHANNEL POWER MOSFET Harris Corporation	1,346	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	5V	800mOhm @ 1.5A, 5V	Through Hole	2.5V @ 250µA	8 nC @ 10 V	80 V	±10V	-	-	-	IPAK	-	30W (Tc)	-55°C ~ 175°C (TJ)
IRF613 N-CHANNEL POWER MOSFET Harris Corporation	2,940	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.6A (Tc)	10V	2.4Ohm @ 1.6A, 10V	Through Hole	4V @ 250µA	8.2 nC @ 10 V	150 V	±20V	135 pF @ 25 V	-	-	TO-220AB	-	43W (Tc)	-55°C ~ 150°C (TJ)
IRFU110 4.7A 100V 0.540 OHM N-CHANNEL Harris Corporation	2,825	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	540mOhm @ 900mA, 10V	Through Hole	4V @ 250µA	8.3 nC @ 10 V	100 V	±20V	180 pF @ 25 V	-	-	TO-251AA	-	25W (Tc)	-55°C ~ 150°C (TJ)
RFP4N06 N-CHANNEL POWER MOSFET Harris Corporation	1,079	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	800mOhm @ 4A, 10V	Through Hole	4V @ 250µA	-	60 V	±20V	200 pF @ 25 V	-	-	TO-220	-	25W (Tc)	-55°C ~ 150°C (TJ)
IRF523 N-CHANNEL POWER MOSFET Harris Corporation	2,608	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	360mOhm @ 5.6A, 10V	Through Hole	4V @ 250µA	15 nC @ 10 V	80 V	±20V	350 pF @ 25 V	-	-	TO-220	-	60W (Tc)	-55°C ~ 175°C (TJ)
RFD3N08LSM9A N-CHANNEL POWER MOSFET Harris Corporation	2,425	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	5V	800mOhm @ 3A, 5V	Surface Mount	2.5V @ 250µA	8.5 nC @ 10 V	80 V	±10V	125 pF @ 25 V	-	-	TO-252 (DPAK)	-	30W (Tc)	-55°C ~ 175°C (TJ)
IRFU9110 3.1A 100V 1.200 OHM P-CHANNEL Harris Corporation	1,735	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	3.1A (Tc)	10V	1.2Ohm @ 1.9A, 10V	Through Hole	4V @ 250µA	8.7 nC @ 10 V	100 V	±20V	200 pF @ 25 V	-	-	TO-251AA	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)
RFP14N06L N-CHANNEL POWER MOSFET Harris Corporation	1,085	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFD9110 0.7A 100V 1.200 OHM P-CHANNEL Harris Corporation	11,617	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	700mA (Ta)	10V	1.2Ohm @ 420mA, 10V	Through Hole	4V @ 250µA	8.7 nC @ 10 V	100 V	±20V	200 pF @ 25 V	-	-	4-DIP, Hexdip, HVMDIP	-	1.3W (Ta)	-55°C ~ 175°C (TJ)

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