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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFW710BTM

IRFW710BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,600 -
IRFW710BTM

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 3.4Ohm @ 1A, 10V Surface Mount 4V @ 250µA 10 nC @ 10 V 400 V ±30V 330 pF @ 25 V - - D2PAK - 3.13W (Ta), 36W (Tc) -55°C ~ 150°C (TJ)
SSN1N45BBU

SSN1N45BBU

MOSFET N-CH 450V 500MA TO92-3

Fairchild Semiconductor

106,358 -
SSN1N45BBU

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Tc) 10V 4.25Ohm @ 250mA, 10V Through Hole 3.7V @ 250µA 8.5 nC @ 10 V 450 V ±50V 240 pF @ 25 V - - TO-92-3 - 900mW (Ta) -55°C ~ 150°C (TJ)
FDG311N

FDG311N

MOSFET N-CH 20V 1.9A SC88

Fairchild Semiconductor

62,208 -
FDG311N

数据表

PowerTrench® 6-TSSOP, SC-88, SOT-363 Bulk Active N-Channel MOSFET (Metal Oxide) 1.9A (Ta) 2.5V, 4.5V 115mOhm @ 1.9A, 4.5V Surface Mount 1.5V @ 250µA 4.5 nC @ 4.5 V 20 V ±8V 270 pF @ 10 V - - SC-88 (SC-70-6) - 750mW (Ta) -55°C ~ 150°C (TJ)
SI6426DQ

SI6426DQ

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

23,244 -
SI6426DQ

数据表

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 5.4A (Ta) 2.5V, 4.5V 35mOhm @ 5.4A, 4.5V Surface Mount 1.5V @ 250µA 10 nC @ 4.5 V 20 V ±8V 710 pF @ 10 V - - 8-TSSOP - 1.1W (Ta) -55°C ~ 150°C (TJ)
SFP9520

SFP9520

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

19,524 -
SFP9520

数据表

- TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 600mOhm @ 3A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 100 V ±30V 550 pF @ 25 V - - TO-220-3 - 49W (Tc) -55°C ~ 175°C (TJ)
SFR9120TF

SFR9120TF

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

5,154 -
SFR9120TF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 4.9A (Tc) 10V 600mOhm @ 2.5A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 100 V ±30V 550 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ)
SFR2955TM

SFR2955TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,002 -
SFR2955TM

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 7.6A (Tc) 10V 300mOhm @ 3.8A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 60 V ±20V 600 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ)
FDG316P

FDG316P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

2,479 -
FDG316P

数据表

PowerTrench® 6-TSSOP, SC-88, SOT-363 Bulk Active P-Channel MOSFET (Metal Oxide) 1.6A (Ta) 4.5V, 10V 190mOhm @ 1.6A, 10V Surface Mount 3V @ 250µA 5 nC @ 10 V 30 V ±20V 165 pF @ 15 V - - SC-88 (SC-70-6) - 750mW (Ta) -55°C ~ 150°C (TJ)
SFR9014TF

SFR9014TF

MOSFET P-CH 60V 5.3A DPAK

Fairchild Semiconductor

2,000 -
SFR9014TF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 500mOhm @ 2.7A, 10V Surface Mount 4V @ 250µA 11 nC @ 10 V 60 V ±30V 350 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 24W (Tc) -55°C ~ 150°C (TJ)
IRLS620A

IRLS620A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,494 -
IRLS620A

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 4.1A (Tc) 5V 800mOhm @ 2.05A, 5V Through Hole 2V @ 250µA 15 nC @ 5 V 200 V ±20V 430 pF @ 25 V - - TO-220F - 26W (Tc) -55°C ~ 150°C (TJ)
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