Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 3

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFI614BTUFP001 N-CHANNEL POWER MOSFET Fairchild Semiconductor	3,000	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.8A (Tc)	10V	2Ohm @ 1.4A, 10V	Through Hole	4V @ 250µA	10.5 nC @ 10 V	250 V	±30V	275 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)
IRFR310BTF N-CHANNEL POWER MOSFET Fairchild Semiconductor	2,215	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1.7A (Tc)	10V	3.4Ohm @ 850mA,10V	Surface Mount	4V @ 250µA	10 nC @ 10 V	400 V	±30V	330 pF @ 25 V	-	-	DPAK	-	2.5W (Ta), 26W (Tc)	-55°C ~ 150°C (TJ)
SFR9214TF P-CHANNEL POWER MOSFET Fairchild Semiconductor	49,206	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	1.53A (Tc)	10V	4Ohm @ 770mA, 10V	Surface Mount	4V @ 250µA	11 nC @ 10 V	250 V	±30V	295 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 19W (Tc)	-55°C ~ 150°C (TJ)
SI3442DV MOSFET N-CH 20V 4.1A SUPERSOT6 Fairchild Semiconductor	32,796	-	询价单	数据表	-	SOT-23-6 Thin, TSOT-23-6	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.1A (Ta)	2.7V, 4.5V	60mOhm @ 4.1A, 4.5V	Surface Mount	1V @ 250µA	14 nC @ 4.5 V	20 V	8V	365 pF @ 10 V	-	-	SuperSOT™-6	-	1.6W (Ta)	-55°C ~ 150°C (TJ)
FDD6632 MOSFET N-CH 30V 9A DPAK Fairchild Semiconductor	17,099	-	询价单	数据表	UltraFET™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	9A (Tc)	4.5V, 10V	70mOhm @ 9A, 10V	Surface Mount	3V @ 250µA	4 nC @ 5 V	30 V	±20V	255 pF @ 15 V	-	-	TO-252 (DPAK)	-	15W (Tc)	-55°C ~ 175°C (TJ)
SSS1N60B N-CHANNEL POWER MOSFET Fairchild Semiconductor	3,684	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1A (Tj)	10V	12Ohm @ 500mA, 10V	Through Hole	4V @ 250µA	7.7 nC @ 10 V	600 V	±30V	215 pF @ 25 V	-	-	TO-220F	-	17W (Tc)	-55°C ~ 150°C (TJ)
IRFI624BTUFP001 N-CHANNEL POWER MOSFET Fairchild Semiconductor	2,000	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.1A (Tc)	10V	1.1Ohm @ 2.05A, 10V	Through Hole	4V @ 250µA	18 nC @ 10 V	250 V	±30V	450 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.13W (Ta), 49W (Tc)	-55°C ~ 150°C (TJ)
FDN372S MOSFET N-CH 30V 2.6A SUPERSOT3 Fairchild Semiconductor	105,449	-	询价单	数据表	PowerTrench®	TO-236-3, SC-59, SOT-23-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.6A (Ta)	4.5V, 10V	40mOhm @ 2.6A, 10V	Surface Mount	3V @ 1mA	8.1 nC @ 5 V	30 V	±16V	630 pF @ 15 V	-	-	SOT-23-3	-	500mW (Ta)	-55°C ~ 150°C (TJ)
FDME0106NZT SMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor	21,625	-	询价单	数据表	PowerTrench®	6-PowerUFDFN	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	1.8V, 4.5V	18mOhm @ 9A, 4.5V	Surface Mount	1V @ 250µA	8.5 nC @ 4.5 V	20 V	±12V	865 pF @ 10 V	-	-	MicroFet 1.6x1.6 Thin	-	700mW (Ta)	-55°C ~ 150°C (TJ)
SI3447DV P-CHANNEL MOSFET Fairchild Semiconductor	3,999	-	询价单	数据表	PowerTrench®	SOT-23-6 Thin, TSOT-23-6	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	5.5A (Ta)	1.8V, 4.5V	33mOhm @ 5.5A, 4.5V	Surface Mount	1.5V @ 250µA	30 nC @ 4.5 V	20 V	±8V	1926 pF @ 10 V	-	-	SuperSOT™-6	-	800mW (Ta)	-55°C ~ 150°C (TJ)

共 1251 条记录«上一页 1 234 5 6...126 下一页»