Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 5

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF710B N-CHANNEL POWER MOSFET Fairchild Semiconductor	29,593	-	询价单	数据表	-	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	10V	3.4Ohm @ 1A, 10V	Through Hole	4V @ 250µA	10 nC @ 10 V	400 V	±30V	330 pF @ 25 V	-	-	TO-220	-	36W (Tc)	-55°C ~ 150°C (TJ)
SI3456DV SMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor	13,529	-	询价单	数据表	PowerTrench®	SOT-23-6 Thin, TSOT-23-6	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	5.1A (Ta)	4.5V, 10V	45mOhm @ 5.1A, 10V	Surface Mount	2V @ 250µA	12.6 nC @ 10 V	30 V	±20V	463 pF @ 15 V	-	-	SuperSOT™-6	-	800mW (Ta)	-55°C ~ 150°C (TJ)
NDC631N MOSFET N-CH 20V 4.1A SUPERSOT6 Fairchild Semiconductor	11,785	-	询价单	数据表	-	SOT-23-6 Thin, TSOT-23-6	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.1A (Ta)	2.7V, 4.5V	60mOhm @ 4.1A, 4.5V	Surface Mount	1V @ 250µA	14 nC @ 4.5 V	20 V	8V	365 pF @ 10 V	-	-	SuperSOT™-6	-	1.6W (Ta)	-55°C ~ 150°C (TJ)
IRFW720BTMNL N-CHANNEL POWER MOSFET Fairchild Semiconductor	11,200	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.3A (Tc)	10V	1.75Ohm @ 1.65A, 10V	Surface Mount	4V @ 250µA	18 nC @ 10 V	400 V	±30V	600 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.13W (Ta), 49W (Tc)	-55°C ~ 150°C (TJ)
SMC6280P MOSFET N-CH Fairchild Semiconductor	9,000	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NDTL01N60ZT1G MOSFET N-CH 600V 250MA SOT223 Fairchild Semiconductor	6,000	-	询价单	数据表	-	TO-261-4, TO-261AA	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	250mA (Tc)	-	15Ohm @ 400mA, 10V	Surface Mount	4.5V @ 50µA	4.9 nC @ 10 V	600 V	±30V	92 pF @ 25 V	-	-	SOT-223 (TO-261)	-	2W (Tc)	-55°C ~ 150°C (TJ)
IRFS634B N-CHANNEL POWER MOSFET Fairchild Semiconductor	4,633	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	8.1A (Tj)	10V	450mOhm @ 4.05A, 10V	Through Hole	4V @ 250µA	38 nC @ 10 V	250 V	±30V	1000 pF @ 25 V	-	-	TO-220F-3	-	38W (Tc)	-55°C ~ 150°C (TJ)
IRFS634BT TRANS MOSFET N-CH 250V 8.1A T/R Fairchild Semiconductor	3,482	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SFI9Z14TU P-CHANNEL POWER MOSFET Fairchild Semiconductor	3,000	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	6.7A (Tc)	10V	500mOhm @ 3.4A, 10V	Through Hole	4V @ 250µA	11 nC @ 10 V	60 V	±30V	350 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.8W (Ta), 38W (Tc)	-55°C ~ 175°C (TJ)
IRFS720B N-CHANNEL POWER MOSFET Fairchild Semiconductor	2,317	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3.3A (Tj)	10V	1.75Ohm @ 1.65A, 10V	Through Hole	4V @ 250µA	18 nC @ 10 V	400 V	±30V	600 pF @ 25 V	-	-	TO-220F	-	33W (Tc)	-55°C ~ 150°C (TJ)

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