Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 6

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRFR220BTM N-CHANNEL POWER MOSFET Fairchild Semiconductor	1,760	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	4.6A (Tc)	10V	800mOhm @ 2.3A, 10V	Surface Mount	4V @ 250µA	16 nC @ 10 V	200 V	±30V	390 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)
SSR2N60BTF N-CHANNEL POWER MOSFET Fairchild Semiconductor	165,500	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1.8A (Tc)	10V	5Ohm @ 900mA, 10V	Surface Mount	4V @ 250µA	17 nC @ 10 V	600 V	±30V	490 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 44W (Tc)	-55°C ~ 150°C (TJ)
NDS356AP-NB8L005A -30V P-CHANNEL LOGIC LEVEL ENHAN Fairchild Semiconductor	73,580	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	1.1A (Ta)	4.5V, 10V	200mOhm @ 1.3A, 10V	Surface Mount	2.5V @ 250µA	4.4 nC @ 5 V	30 V	±20V	280 pF @ 10 V	-	-	SOT-23-3	-	500mW (Ta)	-55°C ~ 150°C (TJ)
SSR1N60BTM MOSFET N-CH 600V 900MA DPAK Fairchild Semiconductor	28,521	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	900mA (Tc)	10V	12Ohm @ 450mA, 10V	Surface Mount	4V @ 250µA	7.7 nC @ 10 V	600 V	±30V	215 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 28W (Tc)	-55°C ~ 150°C (TJ)
IRFS820B N-CHANNEL POWER MOSFET Fairchild Semiconductor	4,853	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2.5A (Tj)	10V	2.6Ohm @ 1.25A, 10V	Through Hole	4V @ 250µA	18 nC @ 10 V	500 V	±30V	610 pF @ 25 V	-	-	TO-220F-3	-	33W (Tc)	-55°C ~ 150°C (TJ)
SSS2N60B N-CHANNEL POWER MOSFET Fairchild Semiconductor	3,094	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2A (Tj)	10V	5Ohm @ 1A, 10V	Through Hole	4V @ 250µA	17 nC @ 10 V	600 V	±30V	490 pF @ 25 V	-	-	TO-220F	-	23W (Tc)	-55°C ~ 150°C (TJ)
SSR1N60BTM-WS MOSFET N-CH 600V 900MA DPAK Fairchild Semiconductor	2,350	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	900mA (Tc)	10V	12Ohm @ 450mA, 10V	Surface Mount	4V @ 250µA	7.7 nC @ 10 V	600 V	±30V	215 pF @ 25 V	-	-	TO-252 (DPAK)	-	2.5W (Ta), 28W (Tc)	-55°C ~ 150°C (TJ)
HUFA76609D3ST_NL N-CHANNEL POWER MOSFET Fairchild Semiconductor	2,281	-	询价单	数据表	UltraFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	10A (Tc)	4.5V, 10V	160mOhm @ 10A, 10V	Surface Mount	3V @ 250µA	16 nC @ 10 V	100 V	±16V	425 pF @ 25 V	-	-	TO-252 (DPAK)	-	49W (Tc)	-55°C ~ 175°C (TJ)
RFD3055 MOSFET N-CH 60V 12A IPAK Fairchild Semiconductor	2,230	-	询价单	数据表	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	10V	150mOhm @ 12A, 10V	Through Hole	4V @ 250µA	23 nC @ 20 V	60 V	±20V	300 pF @ 25 V	-	-	IPAK	-	53W (Tc)	-55°C ~ 175°C (TJ)
SFI9Z24TU P-CHANNEL POWER MOSFET Fairchild Semiconductor	2,000	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	9.7A (Tc)	10V	280mOhm @ 4.9A, 10V	Through Hole	4V @ 250µA	19 nC @ 10 V	60 V	±30V	600 pF @ 25 V	-	-	TO-262 (I2PAK)	-	3.8W (Ta), 49W (Tc)	-55°C ~ 175°C (TJ)

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