Fairchild Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 1

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FDP023N08B 75V N-CHANNEL MOSFET Fairchild Semiconductor	7,556	-	询价单	数据表	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDG315N 2A, 30V, N-CHANNEL, MOSFET Fairchild Semiconductor	3,514	-	询价单	数据表	PowerTrench®	6-TSSOP, SC-88, SOT-363	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	2A (Ta)	4.5V, 10V	120mOhm @ 2A, 10V	Surface Mount	3V @ 250µA	4 nC @ 5 V	30 V	±20V	220 pF @ 15 V	-	-	SC-88 (SC-70-6)	-	750mW (Ta)	-55°C ~ 150°C (TJ)
FDB8880 11A, 30V, 0.0145OHM, N-CHANNEL, Fairchild Semiconductor	3,142	-	询价单	数据表	PowerTrench®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	11A (Ta), 54A (Tc)	4.5V, 10V	11.6mOhm @ 40A, 10V	Surface Mount	2.5V @ 250µA	29 nC @ 10 V	30 V	±20V	1240 pF @ 15 V	-	-	TO-263AB	-	55W (Tc)	-55°C ~ 175°C (TJ)
FCH35N60 MOSFET N-CH 600V 35A TO247-3 Fairchild Semiconductor	8,123	-	询价单	数据表	SuperMOS™	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	98mOhm @ 17.5A, 10V	Through Hole	5V @ 250µA	181 nC @ 10 V	600 V	±30V	6640 pF @ 25 V	-	-	TO-247	-	312.5W (Tc)	-55°C ~ 150°C (TJ)
FDD6530A MOSFET N-CH 20V 21A TO252 Fairchild Semiconductor	3,876	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	21A (Ta)	2.5V, 4.5V	32mOhm @ 8A, 4.5V	Surface Mount	1.2V @ 250µA	9 nC @ 4.5 V	20 V	±8V	710 pF @ 10 V	-	-	TO-252 (DPAK)	-	3.3W (Ta), 33W (Tc)	-55°C ~ 175°C (TJ)
FDS86540 SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor	8,040	-	询价单	数据表	PowerTrench®	8-SOIC (0.154", 3.90mm Width)	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	18A (Ta)	8V, 10V	4.5mOhm @ 18A, 10V	Surface Mount	4V @ 250µA	90 nC @ 10 V	60 V	±20V	6410 pF @ 30 V	-	-	8-SOIC	-	2.5W (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)
FCPF36N60NT MOSFET N-CH 600V 36A TO220F Fairchild Semiconductor	4,064	-	询价单	数据表	SupreMOS™	TO-220-3 Full Pack	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	36A (Tc)	10V	90mOhm @ 18A, 10V	Through Hole	4V @ 250µA	112 nC @ 10 V	600 V	±30V	4785 pF @ 100 V	-	-	TO-220F-3	-	-	-55°C ~ 150°C (TJ)
FDD3706 POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor	2,045	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	14.7A (Ta), 50A (Tc)	2.5V, 10V	9mOhm @ 16.2A, 10V	Surface Mount	1.5V @ 250µA	23 nC @ 4.5 V	20 V	±12V	1882 pF @ 10 V	-	-	TO-252 (DPAK)	-	3.8W (Ta), 44W (Tc)	-55°C ~ 175°C (TJ)
FDD8874 POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	4,034	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	18A (Ta), 116A (Tc)	4.5V, 10V	5.1mOhm @ 35A, 10V	Surface Mount	2.5V @ 250µA	72 nC @ 10 V	30 V	±20V	2990 pF @ 15 V	-	-	TO-252 (DPAK)	-	110W (Tc)	-55°C ~ 175°C (TJ)
FQP3P20 POWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor	6,074	-	询价单	数据表	QFET®	TO-220-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	2.8A (Tc)	10V	2.7Ohm @ 1.4A, 10V	Through Hole	5V @ 250µA	8 nC @ 10 V	200 V	±30V	250 pF @ 25 V	-	-	TO-220-3	-	52W (Tc)	-55°C ~ 150°C (TJ)

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