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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HUFA75307D3STMOSFET N-CH 55V 15A TO252AA Fairchild Semiconductor |
4,459 | - |
|
数据表 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 90mOhm @ 15A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 20 V | 55 V | ±20V | 250 pF @ 25 V | - | - | TO-252 (DPAK) | - | 45W (Tc) | -55°C ~ 175°C (TJ) |
|
HUFA75309D3SMOSFET N-CH 55V 19A TO252AA Fairchild Semiconductor |
4,157 | - |
|
数据表 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 70mOhm @ 19A, 10V | Surface Mount | 4V @ 250µA | 24 nC @ 20 V | 55 V | ±20V | 350 pF @ 25 V | - | - | TO-252 (DPAK) | - | 55W (Tc) | -55°C ~ 175°C (TJ) |
|
FQN1N50CBUMOSFET N-CH 500V 380MA TO92-3 Fairchild Semiconductor |
1,254 | - |
|
数据表 |
QFET® | TO-226-3, TO-92-3 (TO-226AA) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 380mA (Tc) | 10V | 6Ohm @ 190mA, 10V | Through Hole | 4V @ 250µA | 6.4 nC @ 10 V | 500 V | ±30V | 195 pF @ 25 V | - | - | TO-92-3 | - | 890mW (Ta), 2.08W (Tc) | -55°C ~ 150°C (TJ) |
|
HUFA75307T3STPOWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
19,556 | - |
|
数据表 |
UltraFET™ | TO-261-4, TO-261AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 2.6A (Ta) | 10V | 90mOhm @ 2.6A, 10V | Surface Mount | 4V @ 250µA | 17 nC @ 20 V | 55 V | ±20V | 250 pF @ 25 V | AEC-Q101 | - | SOT-223-4 | Automotive | 1.1W (Ta) | -55°C ~ 150°C (TJ) |
|
FDZ197PZ3.8A, 20V, P-CHANNEL, MOSFET Fairchild Semiconductor |
15,000 | - |
|
数据表 |
PowerTrench® | 6-UFBGA, WLCSP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 3.8A (Ta) | 1.5V, 4.5V | 64mOhm @ 2A, 4.5V | Surface Mount | 1V @ 250µA | 25 nC @ 4.5 V | 20 V | ±8V | 1570 pF @ 10 V | - | - | 6-WLCSP (1.0x1.5) | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) |
|
HUFA75309P3MOSFET N-CH 55V 19A TO220-3 Fairchild Semiconductor |
13,174 | - |
|
数据表 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 70mOhm @ 19A, 10V | Through Hole | 4V @ 250µA | 24 nC @ 20 V | 55 V | ±20V | 350 pF @ 25 V | - | - | TO-220-3 | - | 55W (Tc) | -55°C ~ 175°C (TJ) |
|
HUFA76407D3MOSFET N-CH 60V 12A IPAK Fairchild Semiconductor |
10,474 | - |
|
数据表 |
UltraFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 4.5V, 10V | 92mOhm @ 13A, 10V | Through Hole | 3V @ 250µA | 11.3 nC @ 10 V | 60 V | ±16V | 350 pF @ 25 V | - | - | IPAK | - | 38W (Tc) | -55°C ~ 175°C (TJ) |
|
|
HUFA76407D3SMOSFET N-CH 60V 12A TO252AA Fairchild Semiconductor |
8,963 | - |
|
数据表 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 4.5V, 10V | 92mOhm @ 13A, 10V | Surface Mount | 3V @ 250µA | 11.3 nC @ 10 V | 60 V | ±16V | 350 pF @ 25 V | - | - | TO-252 (DPAK) | - | 38W (Tc) | -55°C ~ 175°C (TJ) |
|
FDU6N25POWER FIELD-EFFECT TRANSISTOR, 4 Fairchild Semiconductor |
7,250 | - |
|
数据表 |
UniFET™ | TO-251-3 Stub Leads, IPAK | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 4.4A (Tc) | 10V | 1.1Ohm @ 2.2A, 10V | Through Hole | 5V @ 250µA | 6 nC @ 10 V | 250 V | ±30V | 250 pF @ 25 V | - | - | IPAK | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
|
HUF76419D3STMOSFET N-CH 60V 20A TO252AA Fairchild Semiconductor |
4,274 | - |
|
数据表 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 4.5V, 10V | 37mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 27.5 nC @ 10 V | 60 V | ±16V | 900 pF @ 25 V | - | - | TO-252 (DPAK) | - | 75W (Tc) | -55°C ~ 175°C (TJ) |
