| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFI630BTUN-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,453 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 400mOhm @ 4.5A, 10V | Through Hole | 4V @ 250µA | 29 nC @ 10 V | 200 V | ±30V | 720 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 3.13W (Ta), 72W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SI6466DQN-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,040 | - |
|
数据表 |
PowerTrench® | 8-TSSOP (0.173", 4.40mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 7.8A (Ta) | 2.5V, 4.5V | 15mOhm @ 7.8A, 4.5V | Surface Mount | 1.5V @ 250µA | 20 nC @ 4.5 V | 20 V | ±12V | 1320 pF @ 10 V | - | - | 8-TSSOP | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) |
|
HUF76013D3SMOSFET N-CH 20V 20A TO252AA Fairchild Semiconductor |
1,212 | - |
|
数据表 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 5V, 10V | 22mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 17 nC @ 10 V | 20 V | ±20V | 624 pF @ 20 V | - | - | TO-252 (DPAK) | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
|
SFR9214TMP-CHANNEL POWER MOSFET Fairchild Semiconductor |
412,282 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 1.53A (Tc) | 10V | 4Ohm @ 770mA, 10V | Surface Mount | 4V @ 250µA | 11 nC @ 10 V | 250 V | ±30V | 295 pF @ 25 V | - | - | TO-252 (DPAK) | - | 2.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR210BTFN-CHANNEL POWER MOSFET Fairchild Semiconductor |
218,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 2.7A (Tc) | 10V | 1.5Ohm @ 1.35A, 10V | Surface Mount | 4V @ 250µA | 9.3 nC @ 10 V | 200 V | ±30V | 225 pF @ 25 V | - | - | TO-252 (DPAK) | - | 2.5W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) |
|
SSR1N60BTFN-CHANNEL POWER MOSFET Fairchild Semiconductor |
76,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 900mA (Tc) | 10V | 12Ohm @ 450mA, 10V | Surface Mount | 4V @ 250µA | 7.7 nC @ 10 V | 600 V | ±30V | 215 pF @ 25 V | - | - | TO-252 (DPAK) | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) |
|
|
FDZ293PMOSFET P-CH 20V 4.6A 9BGA Fairchild Semiconductor |
48,430 | - |
|
数据表 |
PowerTrench® | 9-VFBGA | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.6A (Ta) | 2.5V, 4.5V | 46mOhm @ 4.6A, 4.5V | Surface Mount | 1.5V @ 250µA | 11 nC @ 4.5 V | 20 V | ±12V | 754 pF @ 10 V | - | - | 9-BGA (1.5x1.6) | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) |
|
FQD4N25TMMOSFET N-CH 250V 3A DPAK Fairchild Semiconductor |
22,500 | - |
|
数据表 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 1.75Ohm @ 1.5A, 10V | Surface Mount | 5V @ 250µA | 5.6 nC @ 10 V | 250 V | ±30V | 200 pF @ 25 V | - | - | TO-252 (DPAK) | - | 2.5W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) |
|
FDS6630AMOSFET N-CH 30V 6.5A 8SOIC Fairchild Semiconductor |
21,486 | - |
|
数据表 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 6.5A (Ta) | 4.5V, 10V | 38mOhm @ 6.5A, 10V | Surface Mount | 3V @ 250µA | 7 nC @ 5 V | 30 V | ±20V | 460 pF @ 15 V | - | - | 8-SOIC | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
FQE10N20CTUMOSFET N-CH 200V 4A TO126-3 Fairchild Semiconductor |
17,700 | - |
|
数据表 |
QFET® | TO-225AA, TO-126-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 360mOhm @ 2A, 10V | Through Hole | 4V @ 250µA | 26 nC @ 10 V | 200 V | ±30V | 510 pF @ 25 V | - | - | TO-126-3 | - | 12.8W (Tc) | -55°C ~ 150°C (TJ) |