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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDMC8327L

FDMC8327L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

5,102 -
FDMC8327L

数据表

PowerTrench® 8-PowerWDFN Bulk Active N-Channel MOSFET (Metal Oxide) 12A (Ta), 14A (Tc) 4.5V, 10V 9.7mOhm @ 12A, 10V Surface Mount 3V @ 250µA 26 nC @ 10 V 40 V ±20V 1850 pF @ 20 V - - 8-MLP (3.3x3.3) - 2.3W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
FQP9N90C

FQP9N90C

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor

8,277 -
FQP9N90C

数据表

QFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 1.4Ohm @ 4A, 10V Through Hole 5V @ 250µA 58 nC @ 10 V 900 V ±30V 2730 pF @ 25 V - - TO-220-3 - 205W (Tc) -55°C ~ 150°C (TJ)
SI3443DV

SI3443DV

MOSFET P-CH 20V 4.4A MICRO6

Fairchild Semiconductor

5,347 -
SI3443DV

数据表

HEXFET® SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 4.4A (Ta) 2.5V, 4.5V 65mOhm @ 4.4A, 4.5V Surface Mount 1.5V @ 250µA 15 nC @ 4.5 V 20 V ±12V 1079 pF @ 10 V - - Micro6™(TSOP-6) - 2W (Ta) -55°C ~ 150°C (TJ)
IRF9540

IRF9540

IRF9540 - 19A, 100V, 0.2OHM, P-C

Fairchild Semiconductor

6,581 -
IRF9540

数据表

- TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 200mOhm @ 11A, 10V Through Hole 4V @ 250µA 61 nC @ 10 V 100 V ±20V 1400 pF @ 25 V - - TO-220AB - 150W (Tc) -55°C ~ 175°C (TJ)
BS170-D26Z

BS170-D26Z

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

128,646 -
BS170-D26Z

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Bulk Active N-Channel MOSFET (Metal Oxide) 500mA (Ta) 10V 5Ohm @ 200mA, 10V Through Hole 3V @ 1mA - 60 V ±20V 40 pF @ 10 V - - TO-92-3 - 830mW (Ta) -55°C ~ 150°C (TJ)
5HP01M-TL-E-FS

5HP01M-TL-E-FS

MOSFET P-CH 50V 0.07A MCP3

Fairchild Semiconductor

45,000 -
5HP01M-TL-E-FS

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDG314P

FDG314P

MOSFET P-CH 25V 650MA SC88

Fairchild Semiconductor

335,960 -
FDG314P

数据表

- 6-TSSOP, SC-88, SOT-363 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 650mA (Ta) 2.7V, 4.5V 1.1Ohm @ 500mA, 4.5V Surface Mount 1.5V @ 250µA 1.5 nC @ 4.5 V 25 V ±8V 63 pF @ 10 V - - SC-88 (SC-70-6) - 750mW (Ta) -55°C ~ 150°C (TJ)
SSP1N60A

SSP1N60A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

5,115 -
SSP1N60A

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 12Ohm @ 500mA, 10V Through Hole 4V @ 250µA 11 nC @ 10 V 600 V ±30V 190 pF @ 25 V - - TO-220 - 34W (Tc) -55°C ~ 150°C (TJ)
IRFU310BTU

IRFU310BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

99,810 -
IRFU310BTU

数据表

- TO-251-3 Stub Leads, IPAK Bulk Active N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 10V 3.4Ohm @ 850mA,10V Through Hole 4V @ 250µA 10 nC @ 10 V 400 V ±30V 330 pF @ 25 V - - TO-251 (IPAK) - 2.5W (Ta), 26W (Tc) -55°C ~ 150°C (TJ)
SSU1N60BTU

SSU1N60BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

25,769 -
SSU1N60BTU

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 900mA (Tc) 10V 12Ohm @ 450mA, 10V Through Hole 4V @ 250µA 7.7 nC @ 10 V 600 V ±30V 215 pF @ 25 V - - IPAK - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ)
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