| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDMC8327LPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
5,102 | - |
|
数据表 |
PowerTrench® | 8-PowerWDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Ta), 14A (Tc) | 4.5V, 10V | 9.7mOhm @ 12A, 10V | Surface Mount | 3V @ 250µA | 26 nC @ 10 V | 40 V | ±20V | 1850 pF @ 20 V | - | - | 8-MLP (3.3x3.3) | - | 2.3W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) |
|
FQP9N90CPOWER FIELD-EFFECT TRANSISTOR, 8 Fairchild Semiconductor |
8,277 | - |
|
数据表 |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 10V | 1.4Ohm @ 4A, 10V | Through Hole | 5V @ 250µA | 58 nC @ 10 V | 900 V | ±30V | 2730 pF @ 25 V | - | - | TO-220-3 | - | 205W (Tc) | -55°C ~ 150°C (TJ) |
|
SI3443DVMOSFET P-CH 20V 4.4A MICRO6 Fairchild Semiconductor |
5,347 | - |
|
数据表 |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.4A (Ta) | 2.5V, 4.5V | 65mOhm @ 4.4A, 4.5V | Surface Mount | 1.5V @ 250µA | 15 nC @ 4.5 V | 20 V | ±12V | 1079 pF @ 10 V | - | - | Micro6™(TSOP-6) | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
|
IRF9540IRF9540 - 19A, 100V, 0.2OHM, P-C Fairchild Semiconductor |
6,581 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 19A (Tc) | 10V | 200mOhm @ 11A, 10V | Through Hole | 4V @ 250µA | 61 nC @ 10 V | 100 V | ±20V | 1400 pF @ 25 V | - | - | TO-220AB | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
BS170-D26ZSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
128,646 | - |
|
数据表 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | Through Hole | 3V @ 1mA | - | 60 V | ±20V | 40 pF @ 10 V | - | - | TO-92-3 | - | 830mW (Ta) | -55°C ~ 150°C (TJ) |
|
5HP01M-TL-E-FSMOSFET P-CH 50V 0.07A MCP3 Fairchild Semiconductor |
45,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDG314PMOSFET P-CH 25V 650MA SC88 Fairchild Semiconductor |
335,960 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 650mA (Ta) | 2.7V, 4.5V | 1.1Ohm @ 500mA, 4.5V | Surface Mount | 1.5V @ 250µA | 1.5 nC @ 4.5 V | 25 V | ±8V | 63 pF @ 10 V | - | - | SC-88 (SC-70-6) | - | 750mW (Ta) | -55°C ~ 150°C (TJ) |
|
SSP1N60AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
5,115 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1A (Tc) | 10V | 12Ohm @ 500mA, 10V | Through Hole | 4V @ 250µA | 11 nC @ 10 V | 600 V | ±30V | 190 pF @ 25 V | - | - | TO-220 | - | 34W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFU310BTUN-CHANNEL POWER MOSFET Fairchild Semiconductor |
99,810 | - |
|
数据表 |
- | TO-251-3 Stub Leads, IPAK | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1.7A (Tc) | 10V | 3.4Ohm @ 850mA,10V | Through Hole | 4V @ 250µA | 10 nC @ 10 V | 400 V | ±30V | 330 pF @ 25 V | - | - | TO-251 (IPAK) | - | 2.5W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) |
|
SSU1N60BTUN-CHANNEL POWER MOSFET Fairchild Semiconductor |
25,769 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 900mA (Tc) | 10V | 12Ohm @ 450mA, 10V | Through Hole | 4V @ 250µA | 7.7 nC @ 10 V | 600 V | ±30V | 215 pF @ 25 V | - | - | IPAK | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) |