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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIHF520STRL-GE3

SIHF520STRL-GE3

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix

6,166 -
SIHF520STRL-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V Surface Mount 4V @ 250µA 16 nC @ 10 V 100 V ±20V 360 pF @ 25 V - - TO-263 (D2PAK) - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ)
SIHF520STRR-GE3

SIHF520STRR-GE3

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix

5,204 -
SIHF520STRR-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V Surface Mount 4V @ 250µA 16 nC @ 10 V 100 V ±20V 360 pF @ 25 V - - TO-263 (D2PAK) - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ)
SI5482DU-T1-GE3

SI5482DU-T1-GE3

MOSFET N-CH 30V 12A PPAK

Vishay Siliconix

5,047 -
SI5482DU-T1-GE3

数据表

TrenchFET® PowerPAK® ChipFET™ Single Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 15mOhm @ 7.4A, 10V Surface Mount 2V @ 250µA 51 nC @ 10 V 30 V ±12V 1610 pF @ 15 V - - PowerPAK® ChipFET™ Single - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ)
SI5857DU-T1-GE3

SI5857DU-T1-GE3

MOSFET P-CH 20V 6A PPAK CHIPFET

Vishay Siliconix

9,020 -
SI5857DU-T1-GE3

数据表

LITTLE FOOT® PowerPAK® ChipFET™ Single Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6A (Tc) 2.5V, 4.5V 58mOhm @ 3.6A, 4.5V Surface Mount 1.5V @ 250µA 17 nC @ 10 V 20 V ±12V 480 pF @ 10 V - Schottky Diode (Isolated) PowerPAK® ChipFET™ Single - 2.3W (Ta), 10.4W (Tc) -55°C ~ 150°C (TJ)
SIR482DP-T1-GE3

SIR482DP-T1-GE3

MOSFET N-CH 30V 35A PPAK SO-8

Vishay Siliconix

3,957 -
SIR482DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 5.6mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 38 nC @ 10 V 30 V ±20V 1575 pF @ 15 V - - PowerPAK® SO-8 - 5W (Ta), 27.7W (Tc) -55°C ~ 150°C (TJ)
SIS330DN-T1-GE3

SIS330DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix

6,727 -
SIS330DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 5.6mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 35 nC @ 10 V 30 V ±20V 1300 pF @ 15 V - - PowerPAK® 1212-8 - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
SIS448DN-T1-GE3

SIS448DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix

3,766 -
SIS448DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 5.6mOhm @ 10A, 10V Surface Mount 2.3V @ 250µA 38 nC @ 10 V 30 V ±20V 1575 pF @ 15 V - - PowerPAK® 1212-8 - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
SIHA15N80AE-GE3

SIHA15N80AE-GE3

MOSFET N-CH 800V 6A TO220

Vishay Siliconix

973 -
SIHA15N80AE-GE3

数据表

E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 350mOhm @ 7.5A, 10V Through Hole 4V @ 250µA 53 nC @ 10 V 800 V ±30V 1093 pF @ 100 V - - TO-220 Full Pack - 33W (Tc) -55°C ~ 150°C (TJ)
SIDR608EP-T1-RE3

SIDR608EP-T1-RE3

N-CHANNEL 45 V (D-S) 175C MOSFET

Vishay Siliconix

5,990 -
SIDR608EP-T1-RE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 56A (Ta), 228A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 167 nC @ 10 V 45 V +20V, -16V 8900 pF @ 20 V - - PowerPAK® SO-8DC - 7.5W (Ta), 125W (Tc) -55°C ~ 175°C (TJ)
SIDR140DP-T1-RE3

SIDR140DP-T1-RE3

N-CHANNEL 25-V (D-S) MOSFET

Vishay Siliconix

2,998 -
SIDR140DP-T1-RE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 79A (Ta), 100A (Tc) 4.5V, 10V 0.67mOhm @ 20A, 10V Surface Mount 2.1V @ 250µA 170 nC @ 10 V 25 V +20V, -16V 8150 pF @ 10 V - - PowerPAK® SO-8DC - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
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