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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI5404BDC-T1-E3MOSFET N-CH 20V 5.4A 1206-8 Vishay Siliconix |
9,031 | - |
|
数据表 |
TrenchFET® | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.4A (Ta) | 2.5V, 4.5V | 28mOhm @ 5.4A, 4.5V | Surface Mount | 1.5V @ 250µA | 11 nC @ 4.5 V | 20 V | ±12V | - | - | - | 1206-8 ChipFET™ | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
SIHP12N60E-BE3MOSFET N-CH 600V 12A TO220AB Vishay Siliconix |
346 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | - | 380mOhm @ 6A, 10V | Through Hole | 4V @ 250µA | 58 nC @ 10 V | 600 V | ±30V | 937 pF @ 100 V | - | - | TO-220AB | - | 147W (Tc) | -55°C ~ 150°C (TJ) |
|
SQJQ148ER-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix |
1,641 | - |
|
数据表 |
TrenchFET® Gen IV | PowerPAK® 8 x 8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 372A (Tc) | 10V | 1.5mOhm @ 20A, 10V | Surface Mount | 3.5V @ 250µA | 102 nC @ 10 V | 40 V | ±20V | 5750 pF @ 25 V | AEC-Q101 | - | PowerPAK® 8 x 8 | Automotive | 394W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFIBC20GPBFMOSFET N-CH 600V 1.7A TO220-3 Vishay Siliconix |
1,045 | - |
|
数据表 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1.7A (Tc) | 10V | 4.4Ohm @ 1A, 10V | Through Hole | 4V @ 250µA | 18 nC @ 10 V | 600 V | ±20V | 350 pF @ 25 V | - | - | TO-220-3 | - | 30W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHG11N80AE-GE3MOSFET N-CH 800V 8A TO247AC Vishay Siliconix |
480 | - |
|
数据表 |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 10V | 450mOhm @ 5.5A, 10V | Through Hole | 4V @ 250µA | 42 nC @ 10 V | 800 V | ±30V | 804 pF @ 100 V | - | - | TO-247AC | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHA17N80AE-GE3MOSFET N-CH 800V 7A TO220 Vishay Siliconix |
1,000 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 290mOhm @ 8.5A, 10V | Through Hole | 4V @ 250µA | 62 nC @ 10 V | 800 V | ±30V | 1260 pF @ 100 V | - | - | TO-220 Full Pack | - | 34W (Tc) | -55°C ~ 150°C (TJ) |
|
SI4456DY-T1-E3MOSFET N-CH 40V 33A 8SO Vishay Siliconix |
2,475 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | Surface Mount | 2.8V @ 250µA | 122 nC @ 10 V | 40 V | ±20V | 5670 pF @ 20 V | - | - | 8-SOIC | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) |
|
SI1300BDL-T1-GE3MOSFET N-CH 20V 400MA SC70-3 Vishay Siliconix |
2,140 | - |
|
数据表 |
TrenchFET® | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400mA (Tc) | 2.5V, 4.5V | 850mOhm @ 250mA, 4.5V | Surface Mount | 1V @ 250µA | 0.84 nC @ 4.5 V | 20 V | ±8V | 35 pF @ 10 V | - | - | SC-70-3 | - | 190mW (Ta), 200mW (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRFZ44RPBF-BE3MOSFET N-CH 60V 50A TO220AB Vishay Siliconix |
254 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | - | 28mOhm @ 31A, 10V | Through Hole | 4V @ 250µA | 67 nC @ 10 V | 60 V | ±20V | 1900 pF @ 25 V | - | - | TO-220AB | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SIHP17N80AE-GE3MOSFET N-CH 800V 15A TO220AB Vishay Siliconix |
899 | - |
|
数据表 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | Through Hole | 4V @ 250µA | 62 nC @ 10 V | 800 V | ±30V | 1260 pF @ 100 V | - | - | TO-220AB | - | 179W (Tc) | -55°C ~ 150°C (TJ) |
