Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 3

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SI1073X-T1-GE3 MOSFET P-CH 30V 0.98A SC89-6 Vishay Siliconix	5,329	-	询价单	数据表	TrenchFET®	SOT-563, SOT-666	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	980mA (Ta)	4.5V, 10V	173mOhm @ 980mA, 10V	Surface Mount	3V @ 250µA	9.45 nC @ 10 V	30 V	±20V	265 pF @ 15 V	-	-	SC-89 (SOT-563F)	-	236mW (Ta)	-55°C ~ 150°C (TJ)
SI1422DH-T1-GE3 MOSFET N-CH 12V 4A SC70-6 Vishay Siliconix	4,284	-	询价单	数据表	TrenchFET®	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	1.8V, 4.5V	26mOhm @ 5.1A, 4.5V	Surface Mount	1V @ 250µA	20 nC @ 8 V	12 V	±8V	725 pF @ 6 V	-	-	SC-70-6	-	1.56W (Ta), 2.8W (Tc)	-55°C ~ 150°C (TJ)
SIB417AEDK-T1-GE3 MOSFET P-CH 8V 9A PPAK SC75-6 Vishay Siliconix	6,316	-	询价单	数据表	TrenchFET®	PowerPAK® SC-75-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	9A (Tc)	1.2V, 4.5V	32mOhm @ 3A, 4.5V	Surface Mount	1V @ 250µA	18.5 nC @ 5 V	8 V	±5V	878 pF @ 4 V	-	-	PowerPAK® SC-75-6	-	2.4W (Ta), 13W (Tc)	-55°C ~ 150°C (TJ)
SIRA34DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix	2,040	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	6.7mOhm @ 10A, 10V	Surface Mount	2.4V @ 250µA	25 nC @ 10 V	30 V	+20V, -16V	1100 pF @ 15 V	-	-	PowerPAK® SO-8	-	3.3W (Ta), 31.25W (Tc)	-55°C ~ 150°C (TJ)
SIHA21N80AEF-GE3 EF SERIES POWER MOSFET WITH FAST Vishay Siliconix	991	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	7A (Tc)	10V	250mOhm @ 8.5A, 10V	Through Hole	4V @ 250µA	71 nC @ 10 V	800 V	±30V	1511 pF @ 100 V	-	-	TO-220 Full Pack	-	33W (Tc)	-55°C ~ 150°C (TJ)
SI7634BDP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix	704	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	5.4mOhm @ 15A, 10V	Surface Mount	2.6V @ 250µA	68 nC @ 10 V	30 V	±20V	3150 pF @ 15 V	-	-	PowerPAK® SO-8	-	5W (Ta), 48W (Tc)	-55°C ~ 150°C (TJ)
SIHD6N80E-GE3 MOSFET N-CH 800V 5.4A DPAK Vishay Siliconix	1,994	-	询价单	数据表	E	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	5.4A (Tc)	10V	940mOhm @ 3A, 10V	Surface Mount	4V @ 250µA	44 nC @ 10 V	800 V	±30V	827 pF @ 100 V	-	-	TO-252AA	-	78W (Tc)	-55°C ~ 150°C (TJ)
IRFI730GPBF MOSFET N-CH 400V 3.7A TO220-3 Vishay Siliconix	1,105	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3.7A (Tc)	10V	1Ohm @ 2.1A, 10V	Through Hole	4V @ 250µA	38 nC @ 10 V	400 V	±20V	700 pF @ 25 V	-	-	TO-220-3	-	35W (Tc)	-55°C ~ 150°C (TJ)
IRF9520STRLPBF MOSFET P-CH 100V 6.8A D2PAK Vishay Siliconix	1,368	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	6.8A (Tc)	10V	600mOhm @ 4.1A, 10V	Surface Mount	4V @ 250µA	18 nC @ 10 V	100 V	±20V	390 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.7W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)
SIR140DP-T1-RE3 MOSFET N-CH 25V 71.9A/100A PPAK Vishay Siliconix	11,100	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	71.9A (Ta), 100A (Tc)	4.5V, 10V	0.67mOhm @ 20A, 10V	Surface Mount	2.1V @ 250µA	170 nC @ 10 V	25 V	+20V, -16V	8150 pF @ 10 V	-	-	PowerPAK® SO-8	-	6.25W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)

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