Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 2

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SUD50N03-16P-E3 MOSFET N-CH 30V TO252 Vishay Siliconix	9,459	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 37A (Tc)	4.5V, 10V	16mOhm @ 15A, 10V	Surface Mount	3V @ 250µA	13 nC @ 4.5 V	30 V	±20V	1150 pF @ 25 V	-	-	TO-252AA	-	6.5W (Ta), 40.8W (Tc)	-55°C ~ 175°C (TJ)
SIR438DP-T1-GE3 MOSFET N-CH 25V 60A PPAK SO-8 Vishay Siliconix	261	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	1.8mOhm @ 20A, 10V	Surface Mount	2.3V @ 250µA	105 nC @ 10 V	25 V	±20V	4560 pF @ 10 V	-	-	PowerPAK® SO-8	-	5.4W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)
SUD50N03-16P-GE3 MOSFET N-CH 30V TO252 Vishay Siliconix	2,016	-	询价单	数据表	TrenchFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Ta), 37A (Tc)	4.5V, 10V	16mOhm @ 15A, 10V	Surface Mount	3V @ 250µA	13 nC @ 4.5 V	30 V	±20V	1150 pF @ 25 V	-	-	TO-252AA	-	6.5W (Ta), 40.8W (Tc)	-55°C ~ 175°C (TJ)
SIHB21N80AE-GE3 MOSFET N-CH 800V 17.4A D2PAK Vishay Siliconix	905	-	询价单	数据表	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	17.4A (Tc)	10V	235mOhm @ 11A, 10V	Surface Mount	4V @ 250µA	72 nC @ 10 V	800 V	±30V	1388 pF @ 100 V	-	-	TO-263 (D2PAK)	-	32W (Tc)	-55°C ~ 150°C (TJ)
SI7108DN-T1-GE3 MOSFET N-CH 20V 14A PPAK1212-8 Vishay Siliconix	5,905	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	14A (Ta)	4.5V, 10V	4.9mOhm @ 22A, 10V	Surface Mount	2V @ 250µA	30 nC @ 4.5 V	20 V	±16V	-	-	-	PowerPAK® 1212-8	-	1.5W (Ta)	-55°C ~ 150°C (TJ)
IRFI9630GPBF MOSFET P-CH 200V 4.3A TO220-3 Vishay Siliconix	2,020	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	P-Channel	MOSFET (Metal Oxide)	4.3A (Tc)	10V	800mOhm @ 2.6A, 10V	Through Hole	4V @ 250µA	29 nC @ 10 V	200 V	±20V	700 pF @ 25 V	-	-	TO-220-3	-	35W (Tc)	-55°C ~ 150°C (TJ)
SQJ461EP-T2_GE3 P-CHANNEL 60-V (D-S) 175C MOSFET Vishay Siliconix	5,870	-	询价单	数据表	-	PowerPAK® SO-8	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30A (Tc)	4.5V, 10V	16mOhm @ 14.4A, 10V	Surface Mount	2.5V @ 250µA	140 nC @ 10 V	60 V	±20V	4710 pF @ 30 V	-	-	PowerPAK® SO-8	-	83W (Tc)	-55°C ~ 175°C (TJ)
IRF9510SPBF MOSFET P-CH 100V 4A D2PAK Vishay Siliconix	946	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	P-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	1.2Ohm @ 2.4A, 10V	Surface Mount	4V @ 250µA	8.7 nC @ 10 V	100 V	±20V	200 pF @ 25 V	-	-	-	-	43W (Tc)	-55°C ~ 175°C (TJ)
SIR104ADP-T1-RE3 MOSFET N-CH 100V 18.8A/81A PPAK Vishay Siliconix	5,937	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	18.8A (Ta), 81A (Tc)	7.5V, 10V	6.1mOhm @ 15A, 10V	Surface Mount	4V @ 250µA	70 nC @ 10 V	100 V	±20V	3250 pF @ 50 V	-	-	PowerPAK® SO-8	-	5.4W (Ta), 100W (Tc)	-55°C ~ 150°C (TJ)
SIDR638DP-T1-GE3 MOSFET N-CH 40V 100A PPAK SO-8DC Vishay Siliconix	4,599	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	4.5V, 10V	0.88mOhm @ 20A, 10V	Surface Mount	2.3V @ 250µA	204 nC @ 10 V	40 V	+20V, -16V	10500 pF @ 20 V	-	-	PowerPAK® SO-8DC	-	125W (Tc)	-55°C ~ 150°C (TJ)

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