| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SUD35N10-26P-BE3MOSFET N-CH 100V 12A/35A DPAK Vishay Siliconix |
1,504 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Ta), 35A (Tc) | 7V, 10V | 26mOhm @ 12A, 10V | Surface Mount | 4.4V @ 250µA | 47 nC @ 10 V | 100 V | ±20V | 2000 pF @ 12 V | - | - | TO-252AA | - | 8.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFBC40PBF-BE3MOSFET N-CH 600V 6.2A TO220AB Vishay Siliconix |
1,018 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 6.2A (Tc) | - | 1.2Ohm @ 3.7A, 10V | Through Hole | 4V @ 250µA | 60 nC @ 10 V | 600 V | ±20V | 1300 pF @ 25 V | - | - | TO-220AB | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHJ8N60E-T1-GE3MOSFET N-CH 600V 8A PPAK SO-8 Vishay Siliconix |
2,881 | - |
|
数据表 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 10V | 520mOhm @ 4A, 10V | Surface Mount | 4V @ 250µA | 44 nC @ 10 V | 600 V | ±30V | 754 pF @ 100 V | - | - | PowerPAK® SO-8 | - | 89W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFBC30ASPBFMOSFET N-CH 600V 3.6A D2PAK Vishay Siliconix |
2,169 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | Surface Mount | 4.5V @ 250µA | 23 nC @ 10 V | 600 V | ±30V | 510 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
SQJQ150E-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix |
1,960 | - |
|
数据表 |
TrenchFET® | PowerPAK® 8 x 8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 233A (Tc) | 10V | 1.9mOhm @ 20A, 10V | Surface Mount | 3.5V @ 250µA | 92 nC @ 10 V | 40 V | ±20V | 4643 pF @ 25 V | AEC-Q101 | - | PowerPAK® 8 x 8 | Automotive | 187W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF830SPBFMOSFET N-CH 500V 4.5A D2PAK Vishay Siliconix |
1,078 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | Surface Mount | 4V @ 250µA | 38 nC @ 10 V | 500 V | ±20V | 610 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) |
|
SIDR638DP-T1-RE3N-CHANNEL 40-V (D-S) MOSFET Vishay Siliconix |
12,000 | - |
|
数据表 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 64.6A (Ta), 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | Surface Mount | 2.3V @ 250µA | 204 nC @ 10 V | 40 V | +20V, -16V | 10500 pF @ 20 V | - | - | PowerPAK® SO-8DC | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFR9220TRLPBFMOSFET P-CH 200V 3.6A DPAK Vishay Siliconix |
2,455 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 3.6A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | Surface Mount | 4V @ 250µA | 20 nC @ 10 V | 200 V | ±20V | 340 pF @ 25 V | - | - | DPAK | - | 42W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFIBE30GPBFMOSFET N-CH 800V 2.1A TO220-3 Vishay Siliconix |
1,824 | - |
|
数据表 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 2.1A (Tc) | 10V | 3Ohm @ 1.3A, 10V | Through Hole | 4V @ 250µA | 78 nC @ 10 V | 800 V | ±20V | 1300 pF @ 25 V | - | - | TO-220-3 | - | 35W (Tc) | -55°C ~ 150°C (TJ) |
|
SI1400DL-T1-E3MOSFET N-CH 20V 1.6A SC70-6 Vishay Siliconix |
4,482 | - |
|
数据表 |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.6A (Ta) | 2.5V, 4.5V | 150mOhm @ 1.7A, 4.5V | Surface Mount | 600mV @ 250µA (Min) | 4 nC @ 4.5 V | 20 V | ±12V | - | - | - | SC-70-6 | - | 568mW (Ta) | -55°C ~ 150°C (TJ) |