Vishay Siliconix|场效应晶体管（FETs）、MOSFETs - 页 5

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SI3457BDV-T1-E3 MOSFET P-CH 30V 3.7A 6TSOP Vishay Siliconix	2,944	-	询价单	数据表	TrenchFET®	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	3.7A (Ta)	4.5V, 10V	54mOhm @ 5A, 10V	Surface Mount	3V @ 250µA	19 nC @ 10 V	30 V	±20V	-	-	-	6-TSOP	-	1.14W (Ta)	-55°C ~ 150°C (TJ)
SIA418DJ-T1-GE3 MOSFET N-CH 30V 12A PPAK SC70-6 Vishay Siliconix	7,274	-	询价单	数据表	TrenchFET®	PowerPAK® SC-70-6	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	4.5V, 10V	18mOhm @ 9A, 10V	Surface Mount	2.4V @ 250µA	17 nC @ 10 V	30 V	±20V	570 pF @ 15 V	-	-	PowerPAK® SC-70-6	-	3.5W (Ta), 19W (Tc)	-55°C ~ 150°C (TJ)
SI3442CDV-T1-GE3 MOSFET N-CH 20V 8A 6TSOP Vishay Siliconix	9,541	-	询价单	数据表	TrenchFET®	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	2.5V, 10V	27mOhm @ 6.5A, 10V	Surface Mount	1.5V @ 250µA	14 nC @ 10 V	20 V	±12V	335 pF @ 10 V	-	-	6-TSOP	-	1.7W (Ta), 2.7W (Tc)	-55°C ~ 150°C (TJ)
IRF830STRLPBF MOSFET N-CH 500V 4.5A D2PAK Vishay Siliconix	650	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	1.5Ohm @ 2.7A, 10V	Surface Mount	4V @ 250µA	38 nC @ 10 V	500 V	±20V	610 pF @ 25 V	-	-	TO-263 (D2PAK)	-	74W (Tc)	-55°C ~ 150°C (TJ)
SIRA90ADP-T1-GE3 MOSFET N-CH 30V 71A/334A PPAK Vishay Siliconix	5,519	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Cut Tape (CT)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	71A (Ta), 334A (Tc)	-	0.78mOhm @ 20A, 10V	Surface Mount	2.2V @ 250µA	195 nC @ 10 V	30 V	+20V, -16V	9120 pF @ 15 V	-	-	PowerPAK® SO-8	-	6.3W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)
IRF840LCLPBF MOSFET N-CH 500V 8A I2PAK Vishay Siliconix	1,965	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	10V	850mOhm @ 4.8A, 10V	Through Hole	4V @ 250µA	39 nC @ 10 V	500 V	±30V	1100 pF @ 25 V	-	-	I2PAK	-	3.1W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)
SI7615BDN-T1-GE3 MOSFET P-CH 20V 29A/104A PPAK Vishay Siliconix	5,226	-	询价单	数据表	-	PowerPAK® 1212-8	Digi-Reel®	Discontinued at Digi-Key	P-Channel	MOSFET (Metal Oxide)	29A (Ta), 104A (Tc)	-	3.8mOhm @ 20A, 10V	Surface Mount	1.5V @ 250µA	155 nC @ 10 V	20 V	±12V	4890 pF @ 10 V	-	-	PowerPAK® 1212-8	-	5.2W (Ta), 66W (Tc)	-55°C ~ 150°C (TJ)
SIDR390DP-T1-GE3 MOSFET N-CH 30V 69.9A/100A PPAK Vishay Siliconix	7,487	-	询价单	数据表	TrenchFET® Gen IV	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	69.9A (Ta), 100A (Tc)	4.5V, 10V	0.8mOhm @ 20A, 10V	Surface Mount	2V @ 250µA	153 nC @ 10 V	30 V	+20V, -16V	10180 pF @ 15 V	-	-	PowerPAK® SO-8DC	-	6.25W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)
SIDR402EP-T1-RE3 N-CHANNEL 40 V (D-S) 175C MOSFET Vishay Siliconix	5,930	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	65.2A (Ta), 291A (Tc)	4.5V, 10V	0.88mOhm @ 20A, 10V	Surface Mount	2.3V @ 250µA	165 nC @ 10 V	40 V	+20V, -16V	9100 pF @ 20 V	-	-	PowerPAK® SO-8DC	-	7.5W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)
SIR846DP-T1-GE3 MOSFET N-CH 100V 60A PPAK SO-8 Vishay Siliconix	1,980	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	7.5V, 10V	7.8mOhm @ 20A, 10V	Surface Mount	3.5V @ 250µA	72 nC @ 10 V	100 V	±20V	2870 pF @ 50 V	-	-	PowerPAK® SO-8	-	6.25W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)

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