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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI7464DP-T1-GE3MOSFET N-CH 200V 1.8A PPAK SO-8 Vishay Siliconix |
1,930 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1.8A (Ta) | 6V, 10V | 240mOhm @ 2.8A, 10V | Surface Mount | 4V @ 250µA | 18 nC @ 10 V | 200 V | ±20V | - | - | - | PowerPAK® SO-8 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
IRFR430ATRPBFMOSFET N-CH 500V 5A DPAK Vishay Siliconix |
1,748 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 1.7Ohm @ 3A, 10V | Surface Mount | 4.5V @ 250µA | 24 nC @ 10 V | 500 V | ±30V | 490 pF @ 25 V | - | - | DPAK | - | 110W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF9Z30PBF-BE3MOSFET P-CH 50V 18A TO220AB Vishay Siliconix |
8,011 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 140mOhm @ 9.3A, 10V | Through Hole | 4V @ 250µA | 39 nC @ 10 V | 50 V | ±20V | 900 pF @ 25 V | - | - | TO-220AB | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
SIRA54ADP-T1-RE3N-CHANNEL 40 V (D-S) MOSFET POWE Vishay Siliconix |
6,000 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 36.2A (Ta), 128A (Tc) | 4.5V, 10V | 2.2mOhm @ 15A, 10V | Surface Mount | 2.5V @ 250µA | 70 nC @ 10 V | 40 V | +20V, -16V | 3850 pF @ 20 V | - | - | PowerPAK® SO-8 | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) |
|
SIJA54ADP-T1-GE3N-CHANNEL 40 V (D-S) MOSFET POWE Vishay Siliconix |
5,923 | - |
|
数据表 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 35.4A (Ta), 126A (Tc) | 4.5V, 10V | 2.3mOhm @ 15A, 10V | Surface Mount | 2.5V @ 250µA | 70 nC @ 10 V | 40 V | +20V, -16V | 3850 pF @ 20 V | - | - | PowerPAK® SO-8 | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRF9Z24PBF-BE3MOSFET P-CH 60V 11A TO220AB Vishay Siliconix |
891 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 11A (Tc) | - | 280mOhm @ 6.6A, 10V | Through Hole | 4V @ 250µA | 19 nC @ 10 V | 60 V | ±20V | 570 pF @ 25 V | - | - | TO-220AB | - | 60W (Tc) | -55°C ~ 175°C (TJ) |
|
SI1011X-T1-GE3MOSFET P-CH 12V SC89-3 Vishay Siliconix |
8,324 | - |
|
数据表 |
TrenchFET® | SC-89, SOT-490 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 480mA (Ta) | 1.2V, 4.5V | 640mOhm @ 400mA, 4.5V | Surface Mount | 800mV @ 250µA | 4 nC @ 4.5 V | 12 V | ±5V | 62 pF @ 6 V | - | - | SC-89-3 | - | 190mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI1489EDH-T1-GE3MOSFET P-CH 8V 2A SOT-363 Vishay Siliconix |
9,128 | - |
|
数据表 |
TrenchFET® | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2A (Tc) | 1.2V, 4.5V | 48mOhm @ 3A, 4.5V | Surface Mount | 700mV @ 250µA | 16 nC @ 4.5 V | 8 V | ±5V | - | - | - | SC-70-6 | - | 2.8W (Tc) | -55°C ~ 150°C (TJ) |
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|
IRF9610STRRPBFN-CHANNEL200V Vishay Siliconix |
3,959 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 1.8A (Tc) | 10V | 3Ohm @ 900mA, 10V | Surface Mount | 4V @ 250µA | 11 nC @ 10 V | 200 V | ±20V | 170 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) |
|
SI4465ADY-T1-GE3MOSFET P-CH 8V 8SOIC Vishay Siliconix |
2,006 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 13.7A (Ta), 20A (Tc) | 1.8V, 4.5V | 9mOhm @ 14A, 4.5V | Surface Mount | 1V @ 250µA | 85 nC @ 4.5 V | 8 V | ±8V | - | - | - | 8-SOIC | - | 3W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) |
