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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFBE30LPBFMOSFET N-CH 800V 4.1A I2PAK Vishay Siliconix |
988 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | Through Hole | 4V @ 250µA | 78 nC @ 10 V | 800 V | ±20V | 1300 pF @ 25 V | - | - | I2PAK | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF840STRRPBFMOSFET N-CH 500V 8A D2PAK Vishay Siliconix |
691 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | Surface Mount | 4V @ 250µA | 63 nC @ 10 V | 500 V | ±20V | 1300 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHJ240N60E-T1-GE3MOSFET N-CH 600V 12A PPAK SO-8 Vishay Siliconix |
1,100 | - |
|
数据表 |
E | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | Surface Mount | 5V @ 250µA | 23 nC @ 10 V | 600 V | ±30V | 783 pF @ 100 V | - | - | PowerPAK® SO-8 | - | 89W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHP21N80AE-GE3MOSFET N-CH 800V 17.4A TO220AB Vishay Siliconix |
976 | - |
|
数据表 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 17.4A (Tc) | 10V | 235mOhm @ 11A, 10V | Through Hole | 4V @ 250µA | 72 nC @ 10 V | 800 V | ±30V | 1388 pF @ 100 V | - | - | TO-220AB | - | 32W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHP17N80AEF-GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
928 | - |
|
数据表 |
EF | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V | 305mOhm @ 8.5A, 10V | Through Hole | 4V @ 250µA | 63 nC @ 10 V | 800 V | ±30V | 1300 pF @ 100 V | - | - | TO-220AB | - | 179W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRF540STRRPBFMOSFET N-CH 100V 28A D2PAK Vishay Siliconix |
1,476 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | Surface Mount | 4V @ 250µA | 72 nC @ 10 V | 100 V | ±20V | 1700 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SIHP240N60E-GE3MOSFET N-CH 600V 12A TO220AB Vishay Siliconix |
159 | - |
|
数据表 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | Through Hole | 5V @ 250µA | 23 nC @ 10 V | 600 V | ±30V | 795 pF @ 100 V | - | - | TO-220AB | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
IRLIZ24GPBFMOSFET N-CHANNEL 60V 14A TO220 Vishay Siliconix |
7,871 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | Through Hole | 2V @ 250µA | 18 nC @ 5 V | 60 V | ±10V | 870 pF @ 25 V | - | - | TO-220 Full Pack | - | 37W (Tc) | -55°C ~ 175°C (TJ) |
|
SIHU5N50D-E3MOSFET N-CH 500V 5.3A TO251AA Vishay Siliconix |
9,980 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | Through Hole | 5V @ 250µA | 20 nC @ 10 V | 500 V | ±30V | 325 pF @ 100 V | - | - | TO-251AA | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFBC30APBFMOSFET N-CH 600V 3.6A TO220AB Vishay Siliconix |
906 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | Through Hole | 4.5V @ 250µA | 23 nC @ 10 V | 600 V | ±30V | 510 pF @ 25 V | - | - | TO-220AB | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
