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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHP22N60AE-BE3N-CHANNEL 600V Vishay Siliconix |
1,944 | - |
|
数据表 |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | Through Hole | 4V @ 250µA | 96 nC @ 10 V | 600 V | ±30V | 1451 pF @ 100 V | - | - | TO-220AB | - | 179W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF640STRRPBFMOSFET N-CH 200V 18A TO263 Vishay Siliconix |
1,458 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | Surface Mount | 4V @ 250µA | 70 nC @ 10 V | 200 V | ±20V | 1300 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFZ48PBFMOSFET N-CH 60V 50A TO220AB Vishay Siliconix |
978 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | Through Hole | 4V @ 250µA | 110 nC @ 10 V | 60 V | ±20V | 2400 pF @ 25 V | - | - | TO-220AB | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRFZ48RPBFMOSFET N-CH 60V 50A TO220AB Vishay Siliconix |
948 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | Through Hole | 4V @ 250µA | 110 nC @ 10 V | 60 V | ±20V | 2400 pF @ 25 V | - | - | TO-220AB | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF740ALPBFMOSFET N-CH 400V 10A I2PAK Vishay Siliconix |
615 | - |
|
数据表 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | Through Hole | 4V @ 250µA | 36 nC @ 10 V | 400 V | ±30V | 1030 pF @ 25 V | - | - | I2PAK | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRF740ASTRLPBFMOSFET N-CH 400V 10A D2PAK Vishay Siliconix |
550 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | Surface Mount | 4V @ 250µA | 36 nC @ 10 V | 400 V | ±30V | 1030 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
SIHH240N60E-T1-GE3MOSFET N-CH 600V 12A PPAK 8 X 8 Vishay Siliconix |
2,736 | - |
|
数据表 |
EF | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | Surface Mount | 5V @ 250µA | 23 nC @ 10 V | 600 V | ±30V | 783 pF @ 100 V | - | - | PowerPAK® 8 x 8 | - | 89W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IRF9Z34STRRPBFMOSFET P-CH 60V 18A D2PAK Vishay Siliconix |
361 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 140mOhm @ 11A, 10V | Surface Mount | 4V @ 250µA | 34 nC @ 10 V | 60 V | ±20V | 1100 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) |
|
SIHD5N50D-E3MOSFET N-CH 500V 5.3A DPAK Vishay Siliconix |
4,670 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | Surface Mount | 5V @ 250µA | 20 nC @ 10 V | 500 V | ±30V | 325 pF @ 100 V | - | - | TO-252AA | - | 104W (Tc) | -55°C ~ 150°C (TJ) |
|
SI5406DC-T1-E3MOSFET N-CH 12V 6.9A 1206-8 Vishay Siliconix |
7,644 | - |
|
数据表 |
TrenchFET® | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6.9A (Ta) | 2.5V, 4.5V | 20mOhm @ 6.9A, 4.5V | Surface Mount | 600mV @ 1.2mA (Min) | 20 nC @ 4.5 V | 12 V | ±8V | - | - | - | 1206-8 ChipFET™ | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
