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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSO200P03SHXUMA1MOSFET P-CH 30V 7.4A 8DSO Infineon Technologies |
6,791 | - |
|
数据表 |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 7.4A (Ta) | 10V | 20mOhm @ 9.1A, 10V | Surface Mount | 1.5V @ 100µA | 54 nC @ 10 V | 30 V | ±25V | 2330 pF @ 25 V | - | - | PG-DSO-8 | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) |
|
BSS139IXTMA1MOSFET N-CH 250V 100MA SOT23-3 Infineon Technologies |
3,988 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 100mA (Ta) | 0V, 10V | 14Ohm @ 100mA, 10V | Surface Mount | 1V @ 56µA | 2.3 nC @ 5 V | 250 V | ±20V | 60 pF @ 25 V | - | - | PG-SOT23-3-5 | - | 360mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
BSS123IXTMA1100V N-CH SMALL SIGNAL MOSFET IN Infineon Technologies |
6,428 | - |
|
数据表 |
OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | Surface Mount | 1.8V @ 13µA | 0.63 nC @ 10 V | 100 V | ±20V | 15 pF @ 50 V | - | - | PG-SOT23-3-5 | - | 500mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
IPF039N08NF2SATMA1TRENCH 40<-<100V PG-TO263-7 Infineon Technologies |
682 | - |
|
数据表 |
StrongIRFET™ 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 126A (Tc) | 6V, 10V | 3.9mOhm @ 80A, 10V | Surface Mount | 3.8V @ 85µA | 81 nC @ 10 V | 80 V | ±20V | 3800 pF @ 40 V | - | - | PG-TO263-7-14 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPB80N04S2H4ATMA2MOSFET N-CHANNEL_30/40V Infineon Technologies |
602 | - |
|
数据表 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | Surface Mount | 4V @ 250µA | 148 nC @ 10 V | 40 V | ±20V | 4400 pF @ 25 V | - | - | PG-TO263-3-2 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP014N06NF2SAKMA1TRENCH 40<-<100V Infineon Technologies |
8,921 | - |
|
数据表 |
StrongIRFET™2 | TO-220-3 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 39A (Ta), 198A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | Through Hole | 3.3V @ 246µA | 305 nC @ 10 V | 60 V | ±20V | 13800 pF @ 30 V | - | - | PG-TO220-3-U05 | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLML6401TRPBFMOSFET Infineon Technologies |
330,000 | 1+：￥0.679700 3000+：￥0.485800 |
|
数据表 |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.3A (Ta) | 1.8V, 4.5V | 50mOhm @ 4.3A, 4.5V | Surface Mount | 950mV @ 250µA | 15 nC @ 5 V | 12 V | ±8V | 830 pF @ 10 V | - | - | PG-SOT23-3-901 | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IPP881NE7NGXKSA1MOSFET Infineon Technologies |
3,296 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRF7420TRPBF-1MOSFET Infineon Technologies |
6,443 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 11.5A (Ta) | 1.8V, 4.5V | 14mOhm @ 11.5A, 4.5V | Surface Mount | 900mV @ 250µA | 38 nC @ 4.5 V | 12 V | ±8V | 3529 pF @ 10 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IPP033N04NF2SAKMA1TRENCH PG-TO220-3 Infineon Technologies |
9,453 | - |
|
数据表 |
StrongIRFET™2 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25A (Ta), 113A (Tc) | 6V, 10V | 3.3mOhm @ 70A, 10V | Through Hole | 3.4V @ 53µA | 68 nC @ 10 V | 40 V | ±20V | 3200 pF @ 20 V | - | - | PG-TO220-3-U05 | - | 3.8W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) |
