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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IQE050N08NM5ATMA1TRENCH 40<-<100V PG-TSON-8 Infineon Technologies |
9,048 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Ta), 101A (Tc) | 6V, 10V | 5mOhm @ 20A, 10V | Surface Mount | 3.8V @ 49µA | 43.2 nC @ 10 V | 80 V | ±20V | 2900 pF @ 40 V | - | - | PG-TSON-8-4 | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) |
|
SPD30N06S2-23MOSFET N-CH 55V 30A TO252-3 Infineon Technologies |
8,041 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 23mOhm @ 21A, 10V | Surface Mount | 4V @ 50µA | 32 nC @ 10 V | 55 V | ±20V | 1250 pF @ 25 V | - | - | PG-TO252-3-11 | - | - | - |
|
|
IPC055N03L3X1SA1MOSFET N-CH 30V 1A SAWN ON FOIL Infineon Technologies |
6,247 | - |
|
数据表 |
OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1A (Tj) | 4.5V, 10V | 50mOhm @ 2A, 10V | Surface Mount | 2.2V @ 250µA | - | 30 V | - | - | - | - | Sawn on foil | - | - | - |
|
|
IRLR014NTRLMOSFET N-CH 55V 10A DPAK Infineon Technologies |
5,622 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | Surface Mount | 1V @ 250µA | 7.9 nC @ 5 V | 55 V | ±16V | 265 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 28W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPD30N12S3L31ATMA2MOSFET_(120V 300V) Infineon Technologies |
9,794 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 31mOhm @ 30A, 10V | Surface Mount | 2.4V @ 29µA | 31 nC @ 10 V | 120 V | ±20V | 1970 pF @ 25 V | AEC-Q101 | - | PG-TO252-3-11 | Automotive | 57W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRLR3103TRRPBFMOSFET N-CH 30V 55A DPAK Infineon Technologies |
9,030 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55A (Tc) | 4.5V, 10V | 19mOhm @ 33A, 10V | Surface Mount | 1V @ 250µA | 50 nC @ 4.5 V | 30 V | ±16V | 1600 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 107W (Tc) | -55°C ~ 175°C (TJ) |
|
SPB42N03S2L-13 GMOSFET N-CH 30V 42A TO263-3 Infineon Technologies |
5,769 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 4.5V, 10V | 12.6mOhm @ 21A, 10V | Surface Mount | 2V @ 37µA | 30.5 nC @ 10 V | 30 V | ±20V | 1130 pF @ 25 V | - | - | PG-TO263-3-2 | - | 83W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPA65R190DEXKSA1MOSFET Infineon Technologies |
4,399 | - |
|
数据表 |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRF7526D1TRPBFMOSFET P-CH 30V 2A MICRO8 Infineon Technologies |
9,176 | - |
|
数据表 |
FETKY™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 2A (Ta) | 4.5V, 10V | 200mOhm @ 1.2A, 10V | Surface Mount | 1V @ 250µA | 11 nC @ 10 V | 30 V | ±20V | 180 pF @ 25 V | - | Schottky Diode (Isolated) | Micro8™ | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IPB042N10NF2SATMA1TRENCH >=100V Infineon Technologies |
5,414 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
