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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IMT65R022M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 Infineon Technologies |
8,536 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IMT65R039M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 Infineon Technologies |
9,446 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IPB80P03P405ATMA2MOSFET_(20V 40V) PG-TO263-3 Infineon Technologies |
3,626 | - |
|
数据表 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 4.7mOhm @ 80A, 10V | Surface Mount | 4V @ 253µA | 130 nC @ 10 V | 30 V | ±20V | 10300 pF @ 25 V | - | - | PG-TO263-3-2 | - | 137W (Tc) | -55°C ~ 175°C (TJ) |
|
IPA80R460CEXKSA2MOSFET N-CH 800V 10.8A TO220 Infineon Technologies |
500 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 10.8A (Ta) | 10V | 460mOhm @ 7.1A, 10V | Through Hole | 3.9V @ 680µA | 64 nC @ 10 V | 800 V | ±20V | 1600 pF @ 100 V | - | - | PG-TO220-3-31 | - | 34W (Tc) | -40°C ~ 150°C (TJ) |
|
IRFS7734TRLPBFMOSFET N-CH 75V 183A D2PAK Infineon Technologies |
296 | - |
|
数据表 |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | Surface Mount | 3.7V @ 250µA | 270 nC @ 10 V | 75 V | ±20V | 10150 pF @ 25 V | - | - | PG-TO263-3 | - | 290W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IQE050N08NM5CGATMA1TRENCH 40<-<100V PG-TTFN-9 Infineon Technologies |
9,687 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Ta), 101A (Tc) | 6V, 10V | 5mOhm @ 20A, 10V | Surface Mount | 3.8V @ 49µA | 43.2 nC @ 10 V | 80 V | ±20V | 2900 pF @ 40 V | - | - | PG-TTFN-9-1 | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPL65R200CFD7AUMA1COOLMOS CFD7 SUPERJUNCTION MOSFE Infineon Technologies |
3,000 | - |
|
数据表 |
CoolMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 14A (Tc) | 10V | 200mOhm @ 5.2A, 10V | Surface Mount | 4.5V @ 260µA | 23 nC @ 10 V | 650 V | ±20V | 1044 pF @ 400 V | - | - | PG-VSON-4 | - | 81W (Tc) | -40°C ~ 150°C (TJ) |
|
|
IQE065N10NM5SCATMA1OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies |
5,752 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Ta), 85A (Tc) | 6V, 10V | 6.5mOhm @ 20A, 10V | Surface Mount | 3.8V @ 48µA | 43 nC @ 10 V | 100 V | ±20V | 3000 pF @ 50 V | - | - | PG-WHSON-8-1 | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRLIZ34NPBFMOSFET N-CH 55V 22A TO220AB FP Infineon Technologies |
2,129 | - |
|
数据表 |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 4V, 10V | 35mOhm @ 12A, 10V | Through Hole | 2V @ 250µA | 25 nC @ 5 V | 55 V | ±16V | 880 pF @ 25 V | - | - | TO-220AB Full-Pak | - | 37W (Tc) | -55°C ~ 175°C (TJ) |
|
IPD60R280P7SE8228AUMA1MOSFET N-CH 600V 12A TO252-3 Infineon Technologies |
5,751 | - |
|
数据表 |
CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | Surface Mount | 4V @ 190µA | 18 nC @ 10 V | 600 V | ±20V | 761 pF @ 400 V | - | - | PG-TO252-3 | - | 53W (Tc) | -40°C ~ 150°C (TJ) |
