Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 18

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF7726TRPBFXTMA1 MOSFET P-CH 30V 7A MICRO8 Infineon Technologies	7,277	-	询价单	数据表	HEXFET®	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tape & Reel (TR)	Discontinued at Digi-Key	P-Channel	MOSFET (Metal Oxide)	7A (Ta)	4.5V, 10V	26mOhm @ 7A, 10V	Surface Mount	2.5V @ 250µA	69 nC @ 10 V	30 V	±20V	2204 pF @ 25 V	-	-	Micro8™	-	1.79W (Ta)	-55°C ~ 150°C (TJ)
IPB024N08NF2SATMA1 TRENCH 40<-<100V PG-TO263-3 Infineon Technologies	604	-	询价单	数据表	StrongIRFET™ 2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	107A (Tc)	6V, 10V	2.4mOhm @ 100A, 10V	Surface Mount	3.8V @ 85µA	133 nC @ 10 V	80 V	±20V	6200 pF @ 40 V	-	-	PG-TO263-3	-	150W (Tc)	-55°C ~ 175°C (TJ)
IPP65R155CFD7XKSA1 HIGH POWER_NEW Infineon Technologies	157	-	询价单	数据表	CoolMOS™ CFD7	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	155mOhm @ 6.4A, 10V	Through Hole	4.5V @ 320µA	28 nC @ 10 V	650 V	±20V	1283 pF @ 400 V	-	-	PG-TO220-3	-	77W (Tc)	-55°C ~ 150°C (TJ)
IRFS7534TRLPBF MOSFET N CH 60V 195A D2PAK Infineon Technologies	2,332	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	6V, 10V	2.4mOhm @ 100A, 10V	Surface Mount	3.7V @ 250µA	279 nC @ 10 V	60 V	±20V	10034 pF @ 25 V	-	-	PG-TO263-7	-	294W (Tc)	-55°C ~ 175°C (TJ)
IPW60R180P7XKSA1 MOSFET N-CH 650V 18A TO247-3 Infineon Technologies	178	-	询价单	数据表	CoolMOS™ P7	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	180mOhm @ 5.6A, 10V	Through Hole	4V @ 280µA	25 nC @ 10 V	650 V	±20V	1081 pF @ 400 V	-	-	PG-TO247-3	-	72W (Tc)	-55°C ~ 150°C (TJ)
AUIRF7675M2TR MOSFET N-CH 150V 4.4A DIRECTFET Infineon Technologies	9,508	-	询价单	数据表	HEXFET®	DirectFET™ Isometric M2	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	4.4A (Ta), 18A (Tc)	10V	56mOhm @ 11A, 10V	Surface Mount	5V @ 100µA	32 nC @ 10 V	150 V	±20V	1360 pF @ 25 V	-	-	DirectFET™ Isometric M2	-	2.7W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)
IPP60R145CFD7XKSA1 MOSFET N CH Infineon Technologies	479	-	询价单	数据表	CoolMOS™ CFD7	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	145mOhm @ 6.8A, 10V	Through Hole	4.5V @ 340µA	31 nC @ 10 V	600 V	±20V	1330 pF @ 400 V	-	-	PG-TO220-3	-	83W (Tc)	-55°C ~ 150°C (TJ)
IPD90P04P405AUMA2 MOSFET P-CH 40V 90A TO252-3 Infineon Technologies	5,403	-	询价单	数据表	OptiMOS™ P2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	4.7mOhm @ 90A, 10V	Surface Mount	4V @ 250µA	154 nC @ 10 V	40 V	±20V	10300 pF @ 25 V	-	-	PG-TO252-3-313	-	125W (Tc)	-55°C ~ 175°C (TJ)
IPD50P04P4L11AUMA1 MOSFET Infineon Technologies	3,526	-	询价单	数据表	OptiMOS™ P2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	50A (Tc)	4.5V, 10V	10.6mOhm @ 50A, 10V	Surface Mount	2.2V @ 85µA	59 nC @ 10 V	40 V	+5V, -16V	3900 pF @ 25 V	-	-	PG-TO252-3-313	-	58W (Tc)	-55°C ~ 175°C (TJ)
IPP60R160P6XKSA1 MOSFET N-CH 600V 23.8A TO220-3 Infineon Technologies	338	-	询价单	数据表	CoolMOS™ P6	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	23.8A (Tc)	10V	160mOhm @ 9A, 10V	Through Hole	4.5V @ 750µA	44 nC @ 10 V	600 V	±20V	2080 pF @ 100 V	-	-	PG-TO220-3	-	176W (Tc)	-55°C ~ 150°C (TJ)

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