Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 13

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPB120N04S401ATMA1 MOSFET N-CH 40V 120A D2PAK Infineon Technologies	1,813	-	询价单	数据表	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	1.5mOhm @ 100A, 10V	Surface Mount	4V @ 140µA	176 nC @ 10 V	40 V	±20V	14000 pF @ 25 V	-	-	PG-TO263-3	-	188W (Tc)	-55°C ~ 175°C (TJ)
IQE030N06NM5CGATMA1 TRENCH 40<-<100V PG-TTFN-9 Infineon Technologies	4,920	-	询价单	数据表	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	21A (Ta), 137A (Tc)	6V, 10V	3mOhm @ 20A, 10V	Surface Mount	3.3V @ 50µA	49 nC @ 10 V	60 V	±20V	3800 pF @ 30 V	-	-	PG-TTFN-9-1	-	2.5W (Ta), 107W (Tc)	-55°C ~ 175°C (TJ)
IPB180N04S401ATMA1 MOSFET N-CH 40V 180A TO263-7 Infineon Technologies	958	-	询价单	数据表	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	180A (Tc)	10V	1.3mOhm @ 100A, 10V	Surface Mount	4V @ 140µA	176 nC @ 10 V	40 V	±20V	14000 pF @ 25 V	-	-	PG-TO263-7-3	-	188W (Tc)	-55°C ~ 175°C (TJ)
IRFR1205TRRPBF MOSFET N-CH 55V 44A DPAK Infineon Technologies	4,891	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	44A (Tc)	10V	27mOhm @ 26A, 10V	Surface Mount	4V @ 250µA	65 nC @ 10 V	55 V	±20V	1300 pF @ 25 V	-	-	TO-252AA (DPAK)	-	107W (Tc)	-55°C ~ 175°C (TJ)
BSB053N03LP G MOSFET N-CH 30V 17A/71A 2WDSON Infineon Technologies	8,909	-	询价单	数据表	OptiMOS™	3-WDSON	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	17A (Ta), 71A (Tc)	4.5V, 10V	5.3mOhm @ 30A, 10V	Surface Mount	2.2V @ 250µA	29 nC @ 10 V	30 V	±20V	2700 pF @ 15 V	-	-	MG-WDSON-2, CanPAK M™	-	2.3W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
IPP096N03L G MOSFET N-CH 30V 35A TO220-3 Infineon Technologies	9,994	-	询价单	数据表	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	4.5V, 10V	9.6mOhm @ 30A, 10V	Through Hole	2.2V @ 250µA	15 nC @ 10 V	30 V	±20V	1600 pF @ 15 V	-	-	PG-TO220-3	-	42W (Tc)	-55°C ~ 175°C (TJ)
IPP60R160P7XKSA1 MOSFET N-CH 650V 20A TO220-3-1 Infineon Technologies	496	-	询价单	数据表	CoolMOS™ P7	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	160mOhm @ 6.3A, 10V	Through Hole	4V @ 350µA	31 nC @ 10 V	650 V	±20V	1317 pF @ 400 V	-	-	PG-TO220-3-1	-	81W (Tc)	-55°C ~ 150°C (TJ)
IPL60R185C7AUMA1 MOSFET N-CH 600V 13A 4VSON Infineon Technologies	2,922	-	询价单	数据表	CoolMOS™ C7	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	13A (Tc)	10V	185mOhm @ 5.3A, 10V	Surface Mount	4V @ 260µA	24 nC @ 10 V	600 V	±20V	1080 pF @ 400 V	-	-	PG-VSON-4	-	77W (Tc)	-40°C ~ 150°C (TJ)
IPB012N04NF2SATMA1 TRENCH <= 40V Infineon Technologies	795	-	询价单	数据表	StrongIRFET™2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	41A (Ta), 197A (Tc)	6V, 10V	1.25mOhm @ 100A, 10V	Surface Mount	3.4V @ 189µA	239 nC @ 10 V	40 V	±20V	11300 pF @ 20 V	-	-	PG-TO263-3	-	3.8W (Ta), 250W (Tc)	-55°C ~ 175°C (TJ)
IPL60R185CFD7AUMA1 MOSFET N-CH 600V 14A 4VSON Infineon Technologies	2,973	-	询价单	数据表	CoolMOS™ CFD7	4-PowerTSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	185mOhm @ 6A, 10V	Surface Mount	4.5V @ 300µA	28 nC @ 10 V	600 V	±20V	1199 pF @ 400 V	-	-	PG-VSON-4	-	85W (Tc)	-40°C ~ 150°C (TJ)

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