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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRFU8403-701TRLMOSFET Infineon Technologies |
8,521 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | Through Hole | 3.9V @ 100µA | 99 nC @ 10 V | 40 V | ±20V | 3171 pF @ 25 V | - | - | PG-TO251-3-21 | - | 99W (Tc) | -55°C ~ 175°C (TJ) |
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|
IQE030N06NM5CGSCATMA1OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies |
6,000 | - |
|
数据表 |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Ta), 132A (Tc) | 6V, 10V | 3mOhm @ 20A, 10V | Surface Mount | 3.3V @ 50µA | 49 nC @ 10 V | 60 V | ±20V | 3800 pF @ 30 V | - | - | PG-WHTFN-9-1 | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) |
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|
IQE050N08NM5SCATMA1OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies |
5,000 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Ta), 99A (Tc) | 6V, 10V | 5mOhm @ 20A, 10V | Surface Mount | 3.8V @ 49µA | 44 nC @ 10 V | 80 V | ±20V | 2900 pF @ 40 V | - | - | PG-WHSON-8-1 | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP034NE7N3GXKSA1MOSFET N-CH 75V 100A TO220-3 Infineon Technologies |
1,425 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 10V | 3.4mOhm @ 100A, 10V | Through Hole | 3.8V @ 155µA | 117 nC @ 10 V | 75 V | ±20V | 8130 pF @ 37.5 V | - | - | PG-TO220-3 | - | 214W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IQE030N06NM5SCATMA1OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies |
4,990 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 21A (Ta), 132A (Tc) | 6V, 10V | 3mOhm @ 20A, 10V | Surface Mount | 3.3V @ 50µA | 49 nC @ 10 V | 60 V | ±20V | 3800 pF @ 30 V | - | - | PG-WHSON-8-1 | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) |
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|
IPB040N08NF2SATMA1MOSFET N-CH 80V 107A D2PAK Infineon Technologies |
790 | - |
|
数据表 |
StrongIRFET™ 2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 107A (Tc) | 6V, 10V | 4mOhm @ 80A, 10V | Surface Mount | 3.8V @ 85µA | 81 nC @ 10 V | 80 V | ±20V | 3800 pF @ 40 V | - | - | PG-TO263-3 | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) |
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IAUT165N08S5N029ATMA2MOSFET N-CH 80V 165A 8HSOF Infineon Technologies |
1,980 | - |
|
数据表 |
OptiMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 165A (Tc) | 6V, 10V | 2.9mOhm @ 80A, 10V | Surface Mount | 3.8V @ 108µA | 90 nC @ 10 V | 80 V | ±20V | 6370 pF @ 40 V | - | - | PG-HSOF-8-1 | - | 167W (Tc) | -55°C ~ 175°C (TJ) |
|
IPD031N03LGBTMA1MOSFET N-CH 30V 90A TO252-3 Infineon Technologies |
6,036 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | Surface Mount | 2.2V @ 250µA | 51 nC @ 10 V | 30 V | ±20V | 5300 pF @ 15 V | - | - | PG-TO252-3-11 | - | 94W (Tc) | -55°C ~ 175°C (TJ) |
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|
IRFU2405PBFAKLA1MOSFET N-CH Infineon Technologies |
9,785 | - |
|
数据表 |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF5803MOSFET P-CH 40V 3.4A MICRO6 Infineon Technologies |
7,100 | - |
|
数据表 |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | Surface Mount | 3V @ 250µA | 37 nC @ 10 V | 40 V | ±20V | 1110 pF @ 25 V | - | - | Micro6™(TSOP-6) | - | 2W (Ta) | - |
