| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPL60R160CFD7AUMA1MOSFET N CH Infineon Technologies |
3,039 | - |
|
数据表 |
CoolMOS™ CFD7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 160mOhm @ 6.8A, 10V | Surface Mount | 4.5V @ 340µA | 31 nC @ 10 V | 600 V | ±20V | 1330 pF @ 400 V | - | - | PG-VSON-4-1 | - | 95W (Tc) | -40°C ~ 150°C (TJ) |
|
IPAN70R900P7SXKSA1MOSFET N-CH 700V 6A TO220 Infineon Technologies |
9,344 | - |
|
数据表 |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | Through Hole | 3.5V @ 60µA | 6.8 nC @ 10 V | 700 V | ±16V | 211 pF @ 400 V | - | - | PG-TO220-FP | - | 17.9W (Tc) | -40°C ~ 150°C (TJ) |
|
IRF6674TRPBFMOSFET N-CH 60V 13.4A DIRECTFET Infineon Technologies |
13,534 | - |
|
数据表 |
HEXFET® | DirectFET™ Isometric MZ | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13.4A (Ta), 67A (Tc) | 10V | 11mOhm @ 13.4A, 10V | Surface Mount | 4.9V @ 100µA | 36 nC @ 10 V | 60 V | ±20V | 1350 pF @ 25 V | - | - | DIRECTFET™ MZ | - | 3.6W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) |
|
BSO094N03SMOSFET N-CH 30V 10A 8DSO Infineon Technologies |
7,282 | - |
|
数据表 |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | Surface Mount | 2V @ 30µA | 18 nC @ 5 V | 30 V | ±20V | 2300 pF @ 15 V | - | - | PG-DSO-8 | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) |
|
IPB180N04S4H0ATMA1MOSFET N-CH 40V 180A TO263-7-3 Infineon Technologies |
1,573 | - |
|
数据表 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | 10V | 1.1mOhm @ 100A, 10V | Surface Mount | 4V @ 180µA | 225 nC @ 10 V | 40 V | ±20V | 17940 pF @ 25 V | - | - | PG-TO263-7-3 | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
IAUT300N08S5N012ATMA1MOSFET_(75V 120V( Infineon Technologies |
2,550 | - |
|
数据表 |
OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 300A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | Surface Mount | 3.8V @ 275µA | 231 nC @ 10 V | 80 V | ±20V | 16250 pF @ 40 V | - | - | PG-HSOF-8-1 | Automotive | 375W (Tc) | -55°C ~ 175°C (TJ) |
|
IGLR60R260D1E8238XUMA1GAN HV Infineon Technologies |
9,802 | - |
|
数据表 |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | GaNFET (Gallium Nitride) | 10.4A (Tc) | - | - | Surface Mount | 1.6V @ 690µA | - | 600 V | -10V | 110 pF @ 400 V | - | - | PG-TSON-8-7 | - | 52W (Tc) | -40°C ~ 150°C (TJ) |
|
IGLR60R190D1E8238XUMA1GAN HV Infineon Technologies |
7,361 | - |
|
数据表 |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | GaNFET (Gallium Nitride) | 12.8A (Tc) | - | - | Surface Mount | 1.6V @ 960µA | - | 600 V | -10V | 157 pF @ 400 V | - | - | PG-TSON-8-6 | - | 55.5W (Tc) | -40°C ~ 150°C (TJ) |
|
IGOT60R070D1E8237AUMA1GAN HV Infineon Technologies |
5,399 | - |
|
数据表 |
CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | GaNFET (Gallium Nitride) | 31A (Tc) | - | - | Surface Mount | 1.6V @ 2.6mA | - | 600 V | -10V | 380 pF @ 400 V | - | - | PG-DSO-20-87 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPBE65R230CFD7AATMA1MOSFET N-CH 650V 11A TO263-7 Infineon Technologies |
1,931 | - |
|
数据表 |
CoolMOS™ CFD7A | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 230mOhm @ 5.2A, 10V | Surface Mount | 4.5V @ 260µA | 23 nC @ 10 V | 650 V | ±20V | 1044 pF @ 400 V | AEC-Q101 | - | PG-TO263-7-3-10 | Automotive | 63W (Tc) | -40°C ~ 150°C (TJ) |