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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPAN60R210PFD7SXKSA1MOSFET N-CH 650V 16A TO220 Infineon Technologies |
781 | - |
|
数据表 |
CoolMOS™PFD7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 16A (Tc) | 10V | 210mOhm @ 4.9A, 10V | Through Hole | 4.5V @ 240µA | 23 nC @ 10 V | 650 V | ±20V | 1015 pF @ 400 V | - | - | PG-TO220-FP | - | 25W (Tc) | -40°C ~ 150°C (TJ) |
|
IPD90N06S4L03ATMA2MOSFET N-CH 60V 90A TO252-31 Infineon Technologies |
7,406 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 4.5V, 10V | 3.5mOhm @ 90A, 10V | Surface Mount | 2.2V @ 90µA | 170 nC @ 10 V | 60 V | ±16V | 13000 pF @ 25 V | AEC-Q101 | - | PG-TO252-3-11 | Automotive | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
BSD214SN L6327MOSFET N-CH 20V 1.5A SOT363-6 Infineon Technologies |
4,669 | - |
|
数据表 |
OptiMOS™ | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.5A (Ta) | 2.5V, 4.5V | 140mOhm @ 1.5A, 4.5V | Surface Mount | 1.2V @ 3.7µA | 0.8 nC @ 5 V | 20 V | ±12V | 143 pF @ 10 V | - | - | PG-SOT363-PO | - | 500mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
IPD78CN10NGBUMA1MOSFET N-CH 100V 13A TO252-3 Infineon Technologies |
5,268 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 78mOhm @ 13A, 10V | Surface Mount | 4V @ 12µA | 11 nC @ 10 V | 100 V | ±20V | 716 pF @ 50 V | - | - | PG-TO252-3 | - | 31W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPD038N06N3GATMA1MOSFET N-CH 60V 90A TO252-3 Infineon Technologies |
2,376 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 10V | 3.8mOhm @ 90A, 10V | Surface Mount | 4V @ 90µA | 98 nC @ 10 V | 60 V | ±20V | 8000 pF @ 30 V | - | - | PG-TO252-3 | - | 188W (Tc) | -55°C ~ 175°C (TJ) |
|
IPA60R380E6XKSA1MOSFET N-CH 600V 10.6A TO220-FP Infineon Technologies |
150 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | Through Hole | 3.5V @ 320µA | 32 nC @ 10 V | 600 V | ±20V | 700 pF @ 100 V | - | - | PG-TO220-FP | - | 31W (Tc) | -55°C ~ 150°C (TJ) |
|
IRF7413TRPBF-1MOSFET N-CH 30V 13A 8SO Infineon Technologies |
3,250 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Ta) | 4.5V, 10V | 11mOhm @ 7.3A, 10V | Surface Mount | 3V @ 250µA | 79 nC @ 10 V | 30 V | ±20V | 1800 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF7478TRPBF-1MOSFET N-CH 60V 7A 8SO Infineon Technologies |
9,619 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7A (Ta) | 4.5V, 10V | 26mOhm @ 4.2A, 10V | Surface Mount | 3V @ 250µA | 31 nC @ 4.5 V | 60 V | ±20V | 1740 pF @ 25 V | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
IRFC3810BMOSFET 100V 170A DIE Infineon Technologies |
4,347 | - |
|
数据表 |
HEXFET® | Die | Bulk | Obsolete | - | MOSFET (Metal Oxide) | 170A | 10V | 9mOhm @ 170A, 10V | Surface Mount | - | - | 100 V | - | - | - | - | Die | - | - | - |
|
|
IRLC120NBMOSFET 100V 10A DIE Infineon Technologies |
6,877 | - |
|
数据表 |
HEXFET® | Die | Bulk | Obsolete | - | MOSFET (Metal Oxide) | 10A | 10V | 180mOhm @ 10A, 10V | Surface Mount | - | - | 100 V | - | - | - | - | Die | - | - | - |
