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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPB180P04P4L02AUMA2MOSFET Infineon Technologies |
7,423 | - |
|
数据表 |
OptiMOS™ P2 | TO-263-7, D2PAK (6 Leads + Tab) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 180A (Tc) | 4.5V, 10V | 2.4mOhm @ 100A, 10V | Surface Mount | 2.2V @ 410µA | 286 nC @ 10 V | 40 V | +5V, -16V | 18700 pF @ 25 V | - | - | PG-TO263-7-3 | - | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPD70P04P4L08AUMA2MOSFET Infineon Technologies |
8,537 | - |
|
数据表 |
OptiMOS™ P2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 4.5V, 10V | 7.8mOhm @ 70A, 10V | Surface Mount | 2.2V @ 120µA | 92 nC @ 10 V | 40 V | +5V, -16V | 5430 pF @ 25 V | - | - | PG-TO252-3-313 | - | 75W (Tc) | -55°C ~ 175°C (TJ) |
|
BSC059N03STMOSFET N-CH 30V 19A/89A TDSON Infineon Technologies |
7,802 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 19A (Ta), 89A (Tc) | 4.5V, 10V | 5.5mOhm @ 50A, 10V | Surface Mount | 2V @ 35µA | 21 nC @ 5 V | 30 V | ±20V | 2670 pF @ 15 V | - | - | PG-TDSON-8-1 | - | - | -55°C ~ 150°C (TJ) |
|
IPP093N06N3GHKSA1MOSFET N-CH 60V 50A TO220-3 Infineon Technologies |
7,712 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 9.3mOhm @ 50A, 10V | Through Hole | 4V @ 34µA | 36 nC @ 10 V | 60 V | ±20V | 2900 pF @ 30 V | - | - | PG-TO220-3 | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IPP114N03L GMOSFET N-CH 30V 30A TO220-3 Infineon Technologies |
9,542 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 4.5V, 10V | 11.4mOhm @ 30A, 10V | Through Hole | 2.2V @ 250µA | 14 nC @ 10 V | 30 V | ±20V | 1500 pF @ 15 V | - | - | PG-TO220-3 | - | 38W (Tc) | -55°C ~ 175°C (TJ) |
|
IPDD60R145CFD7XTMA1MOSFET N-CH 600V 24A HDSOP-10 Infineon Technologies |
3,296 | - |
|
数据表 |
CoolMOS™ CFD7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 24A (Tc) | - | 145mOhm @ 6A, 10V | Surface Mount | 4.5V @ 300µA | 28 nC @ 10 V | 600 V | ±20V | 1199 pF @ 400 V | - | - | PG-HDSOP-10-1 | - | 160W (Tc) | -55°C ~ 150°C (TJ) |
|
|
IPD50P04P413AUMA2MOSFET Infineon Technologies |
2,415 | - |
|
数据表 |
OptiMOS™ P2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 12.6mOhm @ 50A, 10V | Surface Mount | 4V @ 85µA | 51 nC @ 10 V | 40 V | ±20V | 3670 pF @ 25 V | - | - | PG-TO252-3-313 | - | 58W (Tc) | -55°C ~ 175°C (TJ) |
|
IRF7422D2TRMOSFET P-CH 20V 4.3A 8SO Infineon Technologies |
8,092 | - |
|
数据表 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4.3A (Ta) | 2.7V, 4.5V | 90mOhm @ 2.2A, 4.5V | Surface Mount | 700mV @ 250µA (Min) | 22 nC @ 4.5 V | 20 V | ±12V | 610 pF @ 15 V | - | Schottky Diode (Isolated) | 8-SO | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
|
|
SISC262SN06LX6SA1MOSFET Infineon Technologies |
9,641 | - |
|
数据表 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IAUA220N08S5N021AUMA1MOSFET_(75V 120V( PG-HSOF-5 Infineon Technologies |
2,944 | - |
|
数据表 |
OptiMOS™ | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 220A (Tj) | 6V, 10V | 2.1mOhm @ 100A, 10V | Surface Mount | 3.8V @ 120µA | 105 nC @ 10 V | 80 V | ±20V | 7219 pF @ 40 V | - | - | PG-HSOF-5-4 | - | 211W (Tc) | -55°C ~ 175°C (TJ) |
