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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD49CN10N GMOSFET N-CH 100V 20A TO252-3 Infineon Technologies |
8,098 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 10V | 49mOhm @ 20A, 10V | Surface Mount | 4V @ 20µA | 16 nC @ 10 V | 100 V | ±20V | 1090 pF @ 50 V | - | - | PG-TO252-3 | - | 44W (Tc) | -55°C ~ 175°C (TJ) |
|
BSP317PE6327TMOSFET P-CH 250V 430MA SOT223-4 Infineon Technologies |
5,986 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 430mA (Ta) | 4.5V, 10V | 4Ohm @ 430mA, 10V | Surface Mount | 2V @ 370µA | 15.1 nC @ 10 V | 250 V | ±20V | 262 pF @ 25 V | - | - | PG-SOT223-4 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
SPB08P06PMOSFET P-CH 60V 8.8A TO263-3 Infineon Technologies |
4,023 | - |
|
数据表 |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8.8A (Ta) | 10V | 300mOhm @ 6.2A, 10V | Surface Mount | 4V @ 250µA | 13 nC @ 10 V | 60 V | ±20V | 420 pF @ 25 V | - | - | PG-TO263-3-2 | - | 42W (Tc) | -55°C ~ 175°C (TJ) |
|
|
BSP317PE6327MOSFET P-CH 250V 430MA SOT223-4 Infineon Technologies |
5,009 | - |
|
数据表 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 430mA (Ta) | 4.5V, 10V | 4Ohm @ 430mA, 10V | Surface Mount | 2V @ 370µA | 15.1 nC @ 10 V | 250 V | ±20V | 262 pF @ 25 V | - | - | PG-SOT223-4 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
|
IPC045N10L3X1SA1MOSFET N-CH 100V 1A SAWN ON FOIL Infineon Technologies |
5,582 | - |
|
数据表 |
OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1A (Tj) | 4.5V | 100mOhm @ 2A, 4.5V | Surface Mount | 2.1V @ 33µA | - | 100 V | - | - | - | - | Sawn on foil | - | - | - |
|
|
IPD088N06N3GATMA1MOSFET N-CH 60V 50A TO252-3 Infineon Technologies |
5,774 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 8.8mOhm @ 50A, 10V | Surface Mount | 4V @ 34µA | 48 nC @ 10 V | 60 V | ±20V | 3900 pF @ 30 V | - | - | PG-TO252-3-311 | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
IPL60R1K5C6SATMA1MOSFET N-CH 600V 3A THIN-PAK Infineon Technologies |
2,680 | - |
|
数据表 |
CoolMOS™ C6 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | Surface Mount | 3.5V @ 90µA | 9.4 nC @ 10 V | 600 V | ±20V | 200 pF @ 100 V | - | - | 8-ThinPak (5x6) | - | 26.6W (Tc) | -40°C ~ 150°C (TJ) |
|
IRF5803D2PBFMOSFET P-CH 40V 3.4A 8SO Infineon Technologies |
5,768 | - |
|
数据表 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | Surface Mount | 3V @ 250µA | 37 nC @ 10 V | 40 V | ±20V | 1110 pF @ 25 V | - | Schottky Diode (Isolated) | 8-SO | - | 2W (Ta) | -55°C ~ 150°C (TJ) |
|
|
IRF7807ATRMOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
4,841 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | Surface Mount | 1V @ 250µA | 17 nC @ 5 V | 30 V | ±12V | - | - | - | 8-SO | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) |
|
|
SPN02N60C3MOSFET N-CH 650V 400MA SOT223-4 Infineon Technologies |
7,545 | - |
|
数据表 |
CoolMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400mA (Ta) | 10V | 2.5Ohm @ 1.1A, 10V | Surface Mount | 3.9V @ 80µA | 13 nC @ 10 V | 650 V | ±20V | 200 pF @ 25 V | - | - | PG-SOT223-4 | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) |
