Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 11

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TJ20S04M3L(T6L1,NQ MOSFET P-CH 40V 20A DPAK Toshiba Semiconductor and Storage	935	-	询价单	数据表	U-MOSVI	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20A (Ta)	6V, 10V	22.2mOhm @ 10A, 10V	Surface Mount	3V @ 1mA	37 nC @ 10 V	40 V	+10V, -20V	1850 pF @ 10 V	-	-	DPAK+	-	41W (Tc)	175°C (TJ)
TK5P65W,RQ PB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage	1,987	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5.2A (Ta)	10V	1.22Ohm @ 2.6A, 10V	Surface Mount	3.5V @ 170µA	10.5 nC @ 10 V	650 V	±30V	380 pF @ 300 V	-	-	DPAK	-	60W (Tc)	150°C
TPH5R60APL,L1Q PB-F POWER MOSFET TRANSISTOR N-C Toshiba Semiconductor and Storage	4,942	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Tc)	4.5V, 10V	5.6mOhm @ 30A, 10V	Surface Mount	2.5V @ 500µA	52 nC @ 10 V	100 V	±20V	4300 pF @ 50 V	-	-	8-SOP Advance (5x5)	-	960mW (Ta), 132W (Tc)	175°C
TK35S04K3L(T6L1,NQ MOSFET N-CH 40V 35A DPAK Toshiba Semiconductor and Storage	1,650	-	询价单	数据表	U-MOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	35A (Ta)	6V, 10V	10.3mOhm @ 17.5A, 10V	Surface Mount	3V @ 1mA	28 nC @ 10 V	40 V	±20V	1370 pF @ 10 V	-	-	DPAK+	-	58W (Tc)	175°C (TJ)
TK6P53D(T6RSS-Q) MOSFET N-CH 525V 6A DPAK Toshiba Semiconductor and Storage	1,988	-	询价单	数据表	π-MOSVII	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6A (Ta)	10V	1.3Ohm @ 3A, 10V	Surface Mount	4.4V @ 1mA	12 nC @ 10 V	525 V	±30V	600 pF @ 25 V	-	-	DPAK	-	100W (Tc)	150°C (TJ)
TK7P50D(T6RSS-Q) MOSFET N-CH 500V 7A DPAK Toshiba Semiconductor and Storage	1,939	-	询价单	数据表	π-MOSVII	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7A (Ta)	10V	1.22Ohm @ 3.5A, 10V	Surface Mount	4.4V @ 1mA	12 nC @ 10 V	500 V	±30V	600 pF @ 25 V	-	-	DPAK	-	100W (Tc)	150°C (TJ)
TPCP8005-H(TE85L,F MOSFET N-CH 30V 11A PS-8 Toshiba Semiconductor and Storage	9,259	-	询价单	数据表	U-MOSV-H	8-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Ta)	4.5V, 10V	12.9mOhm @ 5.5A, 10V	Surface Mount	2.5V @ 1mA	20 nC @ 10 V	30 V	±20V	2150 pF @ 10 V	-	-	PS-8 (2.9x2.4)	-	840mW (Ta)	150°C (TJ)
TPH1500CNH1,LQ 150V U-MOS VIII-H SOP-ADVANCE(N) Toshiba Semiconductor and Storage	7,540	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	15.4mOhm @ 19A, 10V	Surface Mount	4V @ 1mA	-	150 V	±20V	2200 pF @ 75 V	-	-	8-SOP Advance (5x5.75)	-	2.5W (Ta), 170W (Tc)	150°C
TJ40S04M3L(T6L1,NQ MOSFET P-CH 40V 40A DPAK Toshiba Semiconductor and Storage	1,754	-	询价单	数据表	U-MOSVI	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	40A (Ta)	6V, 10V	9.1mOhm @ 20A, 10V	Surface Mount	3V @ 1mA	83 nC @ 10 V	40 V	+10V, -20V	4140 pF @ 10 V	-	-	DPAK+	-	68W (Tc)	175°C (TJ)
TJ30S06M3L(T6L1,NQ MOSFET P-CH 60V 30A DPAK Toshiba Semiconductor and Storage	4,000	-	询价单	数据表	U-MOSVI	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30A (Ta)	6V, 10V	21.8mOhm @ 15A, 10V	Surface Mount	3V @ 1mA	80 nC @ 10 V	60 V	+10V, -20V	3950 pF @ 10 V	-	-	DPAK+	-	68W (Tc)	175°C (TJ)

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