Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 12

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SSM6J206FE(TE85L,F MOSFET P-CH 20V 2A ES6 Toshiba Semiconductor and Storage	7,748	-	询价单	数据表	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	2A (Ta)	1.8V, 4V	130mOhm @ 1A, 4V	Surface Mount	1V @ 1mA	-	20 V	±8V	335 pF @ 10 V	-	-	ES6	-	500mW (Ta)	150°C (TJ)
TPH3R008QM,LQ 80V UMOS9-H SOP-ADVANCE(N) 3MOHM Toshiba Semiconductor and Storage	10,863	-	询价单	数据表	U-MOSX-H	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	6V, 10V	3mOhm @ 50A, 10V	Surface Mount	3.5V @ 900µA	71 nC @ 10 V	80 V	±20V	7200 pF @ 40 V	-	-	8-SOP Advance (5x5.75)	-	3W (Ta), 180W (Tc)	175°C
XPH1R104PS,L1XHQ 40V UMOS9-H SOP ADVANCE Toshiba Semiconductor and Storage	5,000	-	询价单	数据表	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	120A (Ta)	6V, 10V	1.14mOhm @ 60A, 10V	Surface Mount	3V @ 500µA	55 nC @ 10 V	40 V	±20V	4560 pF @ 10 V	AEC-Q101	-	8-SOP Advance (5x5)	Automotive	3W (Ta), 132W (Tc)	175°C
TPCP8004(TE85L,F) MOSFET N-CH 30V 8.3A PS-8 Toshiba Semiconductor and Storage	6,807	-	询价单	数据表	U-MOSIV	8-SMD, Flat Leads	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	8.3A (Ta)	4.5V, 10V	8.5mOhm @ 4.2A, 10V	Surface Mount	2.5V @ 1mA	26 nC @ 10 V	30 V	±20V	1270 pF @ 10 V	-	-	PS-8 (2.9x2.4)	-	840mW (Ta)	150°C (TJ)
TK10P50W,RQ PB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage	1,609	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9.7A (Ta)	10V	430mOhm @ 4.9A, 10V	Surface Mount	3.7V @ 500µA	20 nC @ 10 V	500 V	±30V	700 pF @ 300 V	-	-	DPAK	-	80W (Tc)	150°C
TK60S06K3L(T6L1,NQ MOSFET N-CH 60V 60A DPAK Toshiba Semiconductor and Storage	1,755	-	询价单	数据表	U-MOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60A (Ta)	6V, 10V	8mOhm @ 30A, 10V	Surface Mount	3V @ 1mA	60 nC @ 10 V	60 V	±20V	2900 pF @ 10 V	-	-	DPAK+	-	88W (Tc)	175°C (TJ)
TK8P65W,RQ PB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage	1,974	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	7.8A (Ta)	10V	670mOhm @ 3.9A, 10V	Surface Mount	3.5V @ 300µA	16 nC @ 10 V	650 V	±30V	570 pF @ 300 V	-	-	DPAK	-	80W (Tc)	150°C
TPH1400CQ5,LQ 150V UMOS 10-H SOP ADVANCE Toshiba Semiconductor and Storage	4,975	-	询价单	数据表	U-MOSX-H	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	77A (Ta), 32A (Tc)	8V, 10V	14.1mOhm @ 16A, 10V	Surface Mount	4.5V @ 600µA	31 nC @ 10 V	150 V	±20V	3800 pF @ 75 V	-	-	8-SOP Advance (5x5.75)	-	3W (Ta), 170W (Tc)	175°C
TK12P50W,RQ PB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage	1,877	-	询价单	数据表	DTMOSIV	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11.5A (Ta)	10V	340mOhm @ 5.8A, 10V	Surface Mount	3.7V @ 600µA	25 nC @ 10 V	500 V	±30V	890 pF @ 300 V	-	-	DPAK	-	100W (Tc)	150°C
TK6Q60W,S1VQ MOSFET N-CH 600V 6.2A IPAK Toshiba Semiconductor and Storage	183	-	询价单	数据表	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	6.2A (Ta)	10V	820mOhm @ 3.1A, 10V	Through Hole	3.7V @ 310µA	12 nC @ 10 V	600 V	±30V	390 pF @ 300 V	-	-	IPAK	-	60W (Tc)	150°C (TJ)

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