Toshiba Semiconductor and Storage|场效应晶体管（FETs）、MOSFETs - 页 64

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TK17N65W,S1F MOSFET N-CH 650V 17.3A TO247 Toshiba Semiconductor and Storage	7,679	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	17.3A (Ta)	10V	200mOhm @ 8.7A, 10V	Through Hole	3.5V @ 900µA	45 nC @ 10 V	650 V	±30V	1800 pF @ 300 V	-	-	TO-247	-	165W (Tc)	150°C (TJ)
TK40E10N1,S1X MOSFET N CH 100V 90A TO220 Toshiba Semiconductor and Storage	24	-	询价单	数据表	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	8.2mOhm @ 20A, 10V	Through Hole	4V @ 500µA	49 nC @ 10 V	100 V	±20V	3000 pF @ 50 V	-	-	TO-220	-	126W (Tc)	150°C (TJ)
TK25E60X,S1X MOSFET N-CH 600V 25A TO220 Toshiba Semiconductor and Storage	9,253	-	询价单	数据表	DTMOSIV-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	25A (Ta)	10V	125mOhm @ 7.5A, 10V	Through Hole	3.5V @ 1.2mA	40 nC @ 10 V	600 V	±30V	2400 pF @ 300 V	-	-	TO-220	-	180W (Tc)	150°C (TJ)
TK65A10N1,S4X MOSFET N-CH 100V 65A TO220SIS Toshiba Semiconductor and Storage	4,735	-	询价单	数据表	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	65A (Tc)	10V	4.8mOhm @ 32.5A, 10V	Through Hole	4V @ 1mA	81 nC @ 10 V	100 V	±20V	5400 pF @ 50 V	-	-	TO-220SIS	-	45W (Tc)	150°C (TJ)
TK14E65W5,S1X MOSFET N-CH 650V 13.7A TO220 Toshiba Semiconductor and Storage	8,556	-	询价单	数据表	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	13.7A (Ta)	10V	300mOhm @ 6.9A, 10V	Through Hole	4.5V @ 690µA	40 nC @ 10 V	650 V	±30V	1300 pF @ 300 V	-	-	TO-220	-	130W (Tc)	150°C (TJ)
TK17V65W,LQ X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	14	-	询价单	数据表	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	17.3A (Ta)	10V	210mOhm @ 8.7A, 10V	Surface Mount	3.5V @ 900µA	45 nC @ 10 V	650 V	±30V	1800 pF @ 300 V	-	-	4-DFN-EP (8x8)	-	156W (Tc)	150°C
TK31N60W,S1VF MOSFET N CH 600V 30.8A TO247 Toshiba Semiconductor and Storage	7,400	-	询价单	数据表	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	Through Hole	3.7V @ 1.5mA	86 nC @ 10 V	600 V	±30V	3000 pF @ 300 V	-	-	TO-247	-	230W (Tc)	150°C (TJ)
TK16J60W5,S1VQ X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	7	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15.8A (Ta)	10V	230mOhm @ 7.9A, 10V	Through Hole	4.5V @ 790µA	43 nC @ 10 V	600 V	±30V	1350 pF @ 300 V	-	-	TO-3P(N)	-	130W (Tc)	150°C
TK35A65W,S5X MOSFET N-CH 650V 35A TO220SIS Toshiba Semiconductor and Storage	13	-	询价单	数据表	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	35A (Ta)	10V	80mOhm @ 17.5A, 10V	Through Hole	3.5V @ 2.1mA	100 nC @ 10 V	650 V	±30V	4100 pF @ 300 V	-	-	TO-220SIS	-	50W (Tc)	150°C (TJ)
TK39N60X,S1F MOSFET N-CH 600V 38.8A TO247 Toshiba Semiconductor and Storage	14	-	询价单	数据表	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38.8A (Ta)	10V	65mOhm @ 12.5A, 10V	Through Hole	3.5V @ 1.9mA	85 nC @ 10 V	600 V	±30V	4100 pF @ 300 V	-	-	TO-247	-	270W (Tc)	150°C (TJ)

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