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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TK45P03M1,RQ(SMOSFET N-CH 30V 45A DPAK Toshiba Semiconductor and Storage |
7,402 | - |
|
数据表 |
U-MOSVI-H | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 45A (Ta) | 4.5V, 10V | 9.7mOhm @ 22.5A, 10V | Surface Mount | 2.3V @ 200µA | 25 nC @ 10 V | 30 V | ±20V | 1500 pF @ 10 V | - | - | DPAK | - | - | - |
|
TK4A53D(STA4,Q,M)MOSFET N-CH 525V 4A TO220SIS Toshiba Semiconductor and Storage |
5,468 | - |
|
数据表 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | Through Hole | 4.4V @ 1mA | 11 nC @ 10 V | 525 V | ±30V | 490 pF @ 25 V | - | - | TO-220SIS | - | 35W (Tc) | 150°C (TJ) |
|
|
TK3A65DA(STA4,QM)MOSFET N-CH 650V 2.5A TO220SIS Toshiba Semiconductor and Storage |
3,536 | - |
|
数据表 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 2.5A (Ta) | 10V | 2.51Ohm @ 1.3A, 10V | Through Hole | 4.4V @ 1mA | 11 nC @ 10 V | 650 V | ±30V | 490 pF @ 25 V | - | - | TO-220SIS | - | 35W (Tc) | 150°C (TJ) |
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|
TK4A55D(STA4,Q,M)MOSFET N-CH 550V 4A TO220SIS Toshiba Semiconductor and Storage |
3,133 | - |
|
数据表 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 10V | 1.88Ohm @ 2A, 10V | Through Hole | 4.4V @ 1mA | 11 nC @ 10 V | 550 V | ±30V | 490 pF @ 25 V | - | - | TO-220SIS | - | 35W (Tc) | 150°C (TJ) |
|
|
TK4A60DB(STA4,Q,M)MOSFET N-CH 600V 3.7A TO220SIS Toshiba Semiconductor and Storage |
5,265 | - |
|
数据表 |
π-MOSVII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 3.7A (Ta) | 10V | 2Ohm @ 1.9A, 10V | Through Hole | 4.4V @ 1mA | 11 nC @ 10 V | 600 V | ±30V | 540 pF @ 25 V | - | - | TO-220SIS | - | 35W (Tc) | 150°C (TJ) |
|
|
TK4A65DA(STA4,Q,M)MOSFET N-CH 650V 3.5A TO220SIS Toshiba Semiconductor and Storage |
6,924 | - |
|
数据表 |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3.5A (Ta) | 10V | 1.9Ohm @ 1.8A, 10V | Through Hole | 4.4V @ 1mA | 12 nC @ 10 V | 650 V | ±30V | 600 pF @ 25 V | - | - | TO-220SIS | - | 35W (Tc) | 150°C (TJ) |
|
TK4P50D(T6RSS-Q)MOSFET N-CH 500V 4A DPAK Toshiba Semiconductor and Storage |
8,825 | - |
|
数据表 |
π-MOSVII | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 10V | 2Ohm @ 2A, 10V | Surface Mount | 4.4V @ 1mA | 9 nC @ 10 V | 500 V | ±30V | 380 pF @ 25 V | - | - | DPAK | - | 80W (Tc) | 150°C (TJ) |
|
TK8R2E06PL,S1XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
9,416 | - |
|
数据表 |
U-MOSIX-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 8.2mOhm @ 25A, 10V | Through Hole | 2.5V @ 300µA | 28 nC @ 10 V | 60 V | ±20V | 1990 pF @ 30 V | - | - | TO-220 | - | 81W (Tc) | 175°C |
|
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TK4P55DA(T6RSS-Q)MOSFET N-CH 550V 3.5A DPAK Toshiba Semiconductor and Storage |
5,355 | - |
|
数据表 |
π-MOSVII | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 3.5A (Ta) | 10V | 2.45Ohm @ 1.8A, 10V | Surface Mount | 4.4V @ 1mA | 9 nC @ 10 V | 550 V | ±30V | 380 pF @ 25 V | - | - | DPAK | - | 80W (Tc) | 150°C (TJ) |
|
|
TK4P55D(T6RSS-Q)MOSFET N-CH 550V 4A DPAK Toshiba Semiconductor and Storage |
6,302 | - |
|
数据表 |
π-MOSVII | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 10V | 1.88Ohm @ 2A, 10V | Surface Mount | 4.4V @ 1mA | 11 nC @ 10 V | 550 V | ±30V | 490 pF @ 25 V | - | - | DPAK | - | 80W (Tc) | 150°C (TJ) |
